DefectRepository.bib

@article{andersen2002,
  title = {Electrical Activity of Carbon-Hydrogen Centers in {{Si}}},
  author = {Andersen, O. and Peaker, A. R. and Dobaczewski, L. and Nielsen, K. Bonde and Hourahine, B. and Jones, R. and Briddon, P. R. and {\"O}berg, S.},
  year = {2002},
  volume = {66},
  pages = {235205},
  doi = {10.1103/PhysRevB.66.235205},
  abstract = {The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.},
  file = {/home/arch/Zotero/storage/JHI4WP36/2002_Electrical_activity_of.pdf;/home/arch/Zotero/storage/LAXCDSSY/PhysRevB.66.html},
  journal = {Physical Review B},
  number = {23}
}

@article{asom1987,
  title = {Interstitial Defect Reactions in Silicon},
  author = {Asom, M. T. and Benton, J. L. and Sauer, R. and Kimerling, L. C.},
  year = {1987},
  volume = {51},
  pages = {256--258},
  issn = {0003-6951},
  doi = {10.1063/1.98465},
  file = {/home/arch/Zotero/storage/BMF6TMVT/1987_Interstitial_defect_reactions.pdf;/home/arch/Zotero/storage/L9ASANCD/1.html},
  journal = {Applied Physics Letters},
  keywords = {carbon,defects in semiconductors,InDatabase,silicon},
  number = {4}
}

@article{astrova1998,
  title = {Process Induced Deep-Level Defects in High Purity Silicon},
  author = {Astrova, E. V. and Voronkov, V. B. and Kozlov, V. A. and Lebedev, A. A.},
  year = {1998},
  volume = {13},
  pages = {488},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/13/5/008},
  abstract = {Deep-level defects appear in silicon upon heat treatment of wafers with surface disordered by mechanical lapping or introducing high concentration impurity in diffusion layer, i.e. in regimes typical of fabrication of high voltage devices. By means of capacitance transient spectroscopy, combined with other methods, it was shown that dominant electron traps with ionization energies of 0.28 and 0.54 eV of double level donor have low recombination activity, but affect the resistivity of high purity Si and play a key role in limiting the p-n junction breakdown voltage \#\#IMG\#\# [http://ej.iop.org/images/0268-1242/13/5/008/img1.gif] . A careful study of the defect parameters showed their similarity to sulphur-related centres in Si.},
  file = {/home/arch/Zotero/storage/3L4L3XMB/1998Process_induced_deep-level.pdf;/home/arch/Zotero/storage/9FYRFRVY/1998Process_induced_deep-level.pdf},
  journal = {Semiconductor Science and Technology},
  keywords = {complicated,defects in semiconductors,quenching (thermal),sulfur,ToGoInDatabase},
  language = {en},
  number = {5}
}

@article{baber1987,
  title = {Characterization of Silver-related Deep Levels in Silicon},
  author = {Baber, N. and Grimmeiss, H. G. and Kleverman, M. and Omling, P. and Iqbal, M. Zafar},
  year = {1987},
  volume = {62},
  pages = {2853--2857},
  issn = {0021-8979},
  doi = {10.1063/1.339425},
  file = {/home/arch/Zotero/storage/U9WFLQQR/1987_Characterization_of.pdf;/home/arch/Zotero/storage/9W4H9KQC/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,InDatabase,siliver},
  number = {7}
}

@article{bemski1958,
  title = {Recombination {{Properties}} of {{Gold}} in {{Silicon}}},
  author = {Bemski, G.},
  year = {1958},
  volume = {111},
  pages = {1515--1518},
  doi = {10.1103/PhysRev.111.1515},
  abstract = {The presence of gold atoms in the silicon lattice decreases the lifetime of excess electrons and holes in p- and n-type material. The capture of electrons in p-type silicon occurs through the gold donor level with a capture cross section, {$\sigma$}n0, of 3.5\texttimes{}10-15 cm2 (at 300\textdegree{}K). This capture cross section varies as T-2.5 between 200\textdegree{} and 500\textdegree{}K. In n-type silicon the electron capture cross section, {$\sigma$}n0, is 5\texttimes{}10-16 cm2 at 300\textdegree{}K and is temperature independent; the hole capture cross section, {$\sigma$}p0, is 1\texttimes{}10-15 cm2 at 300\textdegree{}K and varies as T-4. The capture in this case occurs through the gold acceptor level.},
  file = {/home/arch/Zotero/storage/4L5H7I5V/1958_Recombination_Properties_of.pdf},
  journal = {Physical Review},
  keywords = {gold,InDatabase,lifetime spectroscopy,silicon},
  number = {6}
}

@article{benton1982,
  title = {Capacitance {{Transient Spectroscopy}} of {{Trace Contamination}} in {{Silicon}}},
  author = {Benton, J. L. and Kimerling, L. C.},
  year = {1982},
  volume = {129},
  pages = {2098--2102},
  issn = {0013-4651, 1945-7111},
  doi = {10.1149/1.2124387},
  abstract = {Capacitance transient spectroscopy is applied to the study of trace contamination in semiconductor devices. The introduction of electrically active, process-related defects in concentrations {$\geq$}1010 cm-3 is examined. Impurities are identified by correlation of the generated spectra with reference tables. The technique is effective in examining finished devices as well as in analyzing individual manufacturing steps.},
  file = {/home/arch/Zotero/storage/AEY4Q6PX/1982_Capacitance_Transient.pdf;/home/arch/Zotero/storage/BVSKXL9Y/2098.html},
  journal = {Journal of The Electrochemical Society},
  keywords = {capacitance measurement,deep level transient spectroscopy,defects in semiconductors,InDatabase,semiconductor device measurement,silicon},
  language = {en},
  number = {9}
}

@article{benton1999,
  title = {Behavior of {{Molybdenum}} in {{Silicon Evaluated}} for {{Integrated Circuit Processing}}},
  author = {Benton, J. L. and Jacobson, D. C. and Jackson, B. and Johnson, J. A. and Boone, T. and Eaglesham, D. J. and Stevie, F. A. and Becerro, J.},
  year = {1999},
  volume = {146},
  pages = {1929--1933},
  issn = {0013-4651, 1945-7111},
  doi = {10.1149/1.1391868},
  abstract = {Mo is introduced into Si integrated circuits inadvertently during processing, often during Si epitaxial growth, high temperature furnace treatments, or ion implantation. Quantitative secondary ion mass spectrometry measurement of Mo concentrations in Si introduced by implantation is complicated by mass aliasing of and and by unexpected isotope ratios. Employing deep level transient spectroscopy depth profiling of implanted Mo in Si, we determine for the first time the diffusivity of Mo in Si, . We observe soluble Mo in Si at concentrations as high as , but present evidence that the solubility of Mo in Si is mediated by crystal defects and proximity of the surface. Mo does reduce carrier lifetime in Si, although it is not as an effective recombination center as Fe in Si. And in addition, Mo is not gettered to either epitaxial substrates or by high energy B implantation. Process engineers and circuit designers can expect little effect of Mo contamination on metal oxide semiconductor devices but can assume that trace Mo contamination may cause leakage current in bipolar devices. \textcopyright{} 1999 The Electrochemical Society. All rights reserved.},
  file = {/home/arch/Zotero/storage/EX7XT4AC/1999_Behavior_of_Molybdenum_in.pdf;/home/arch/Zotero/storage/Y9X5QTV6/1929.html},
  journal = {Journal of The Electrochemical Society},
  keywords = {ToGoInDatabase},
  language = {en},
  number = {5}
}

@article{birkholz2005,
  title = {Electronic Properties of Iron-Boron Pairs in Crystalline Silicon by Temperature- and Injection-Level-Dependent Lifetime Measurements},
  author = {Birkholz, Jens E. and Bothe, Karsten and Macdonald, Daniel and Schmidt, Jan},
  year = {2005},
  volume = {97},
  pages = {103708},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.1897489},
  file = {/home/arch/Zotero/storage/7S5CM5C2/2005_Electronic_properties_of.pdf},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,injection dependent lifetime,iron boron,silicon,temperature dependent lifetime},
  language = {en},
  number = {10}
}

@article{brotherton1978,
  title = {The Electron Capture Cross Section and Energy Level of the Gold Acceptor Center in Silicon},
  author = {Brotherton, S. D. and Bicknell, J.},
  year = {1978},
  volume = {49},
  pages = {667--671},
  issn = {0021-8979},
  doi = {10.1063/1.324641},
  file = {/home/arch/Zotero/storage/XNFA7NU5/1978The_electron_capture_cross.pdf},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,gold,InDatabase},
  number = {2}
}

@article{brotherton1980,
  title = {Electron and {{Hole Capture}} at {{Au}} and {{Pt Centers}} in {{Silicon}}},
  author = {Brotherton, S. D. and Lowther, J. E.},
  year = {1980},
  volume = {44},
  pages = {606--609},
  doi = {10.1103/PhysRevLett.44.606},
  abstract = {Emission rates and hole-capture cross sections for the Au donor center in silicon are reported and from entropy considerations this center is shown to be similar in behavior to the Pt donor center. In contrast, the gold and platinum acceptor states display significantly different entropy changes on electron emission. A similar chemical structure for both these defects is proposed which is then used to interpret differences in electron emission behavior from the acceptor forms of the two defects.},
  file = {/home/arch/Zotero/storage/9P32T5A5/1980_Electron_and_Hole_Capture_at.pdf;/home/arch/Zotero/storage/7LWJEB75/PhysRevLett.44.html},
  journal = {Physical Review Letters},
  number = {9}
}

@article{brotherton1982,
  title = {Defect Production and Lifetime Control in Electron and {$\Gamma$}-irradiated Silicon},
  author = {Brotherton, S. D. and Bradley, P.},
  year = {1982},
  volume = {53},
  pages = {5720--5732},
  issn = {0021-8979},
  doi = {10.1063/1.331460},
  file = {/home/arch/Zotero/storage/92MVM2LS/1982_Defect_production_and.pdf;/home/arch/Zotero/storage/CFEKU9IK/1.html},
  journal = {Journal of Applied Physics},
  keywords = {A-center (SiO_v),DLTS,E center (SiP_v),FZ,InDatabase,irridation,vacancies},
  number = {8}
}

@article{brotherton1983,
  title = {Photoionization Cross Section of Electron Irradiation Induced Levels in Silicon},
  author = {Brotherton, S. D. and Parker, G. J. and Gill, A.},
  year = {1983},
  volume = {54},
  pages = {5112--5116},
  issn = {0021-8979},
  doi = {10.1063/1.332732},
  file = {/home/arch/Zotero/storage/45VZ7IJL/1983Photoionization_cross_section_of.pdf;/home/arch/Zotero/storage/WXGYR2EJ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {optical capture cross sections,photocapacitance},
  number = {9}
}

@article{brotherton1984,
  title = {Electrical Observation of the {{Au}}-{{Fe}} Complex in Silicon},
  author = {Brotherton, S. D. and Bradley, P. and Gill, A. and Weber, E. R.},
  year = {1984},
  volume = {55},
  pages = {952--956},
  issn = {0021-8979},
  doi = {10.1063/1.333149},
  file = {/home/arch/Zotero/storage/LIG3LBXW/1984Electrical_observation_of_the_Au‐Fe.pdf;/home/arch/Zotero/storage/7T9KBESP/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,gold,InDatabase,iron},
  number = {4}
}

@article{brotherton1985,
  title = {Iron and the Iron-boron Complex in Silicon},
  author = {Brotherton, S. D. and Bradley, P. and Gill, A.},
  year = {1985},
  volume = {57},
  pages = {1941--1943},
  issn = {0021-8979},
  doi = {10.1063/1.335468},
  file = {/home/arch/Zotero/storage/WAII2XWQ/1985_Iron_and_the_iron‐boron.pdf},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,iron},
  number = {6}
}

@article{brotherton1987,
  title = {Deep Levels of Copper in Silicon},
  author = {Brotherton, S. D. and Ayres, J. R. and Gill, A. and {van Kesteren}, H.w. and Greidanus, F. J. a. M.},
  year = {1987},
  volume = {62},
  pages = {1826--1832},
  issn = {0021-8979},
  doi = {10.1063/1.339564},
  file = {/home/arch/Zotero/storage/ZXERRWDS/1987_Deep_levels_of_copper_in.pdf;/home/arch/Zotero/storage/5VJVQW23/1.html},
  journal = {Journal of Applied Physics},
  keywords = {copper,defects in semiconductors,DLTS,InDatabase,luminescence,silicon},
  number = {5}
}

@article{carlson1956,
  title = {Properties of {{Silicon Doped}} with {{Manganese}}},
  author = {Carlson, R. O.},
  year = {1956},
  volume = {104},
  pages = {937--941},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.104.937},
  file = {/home/arch/Zotero/storage/Q4EW3BQ2/1956_Properties_of_Silicon_Doped.pdf},
  journal = {Physical Review},
  keywords = {defects in semiconductors,hall coefficient,InDatabase,Manganese,silicon},
  language = {en},
  number = {4}
}

@article{carlson1957,
  title = {Double-{{Acceptor Behavior}} of {{Zinc}} in {{Silicon}}},
  author = {Carlson, R. O.},
  year = {1957},
  volume = {108},
  pages = {1390--1393},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.108.1390},
  file = {/home/arch/Zotero/storage/2Q9US9Y6/1957_Double-Acceptor_Behavior_of.pdf},
  journal = {Physical Review},
  keywords = {defects in semiconductors,hall coefficient,silicon,zinc},
  language = {en},
  number = {6}
}

@article{chan1971,
  title = {Defect {{Centers}} in {{Boron}}-{{Implanted Silicon}}},
  author = {Chan, W. W. and Sah, C. T.},
  year = {1971},
  volume = {42},
  pages = {4768--4773},
  issn = {0021-8979},
  doi = {10.1063/1.1659853},
  file = {/home/arch/Zotero/storage/J3HNPGAQ/1971_Defect_Centers_in.pdf;/home/arch/Zotero/storage/53PZR5HX/1.html},
  journal = {Journal of Applied Physics},
  keywords = {boron,defects in semiconductors,DLTS,InDatabase,ion implantation},
  number = {12}
}

@article{chantre1985,
  title = {Metastable-Defect Behavior in Silicon: {{Charge}}-State-Controlled Reorientation of Iron-Aluminum Pairs},
  shorttitle = {Metastable-Defect Behavior in Silicon},
  author = {Chantre, Alain and Bois, Daniel},
  year = {1985},
  volume = {31},
  pages = {7979--7988},
  doi = {10.1103/PhysRevB.31.7979},
  abstract = {We report the observation of a novel example of defect metastability in silicon. The phenomenon, monitored by deep-level transient spectroscopy, takes place at a well-identified point defect, i.e., the interstitial-iron\textendash{}substitutional-aluminum pair (Fe(i)Al(s)). The charge state of the defect during sample cooldown to low temperature is found to control a reversible transmutation behavior between two defect energy levels, at EV+0.20 eV (H1) and EV+0.13 eV (H2). A kinetic study of the transformation has led to a detailed microscopic description of the phenomenon. It is shown to arise from a charge-state-controlled, electrostatically driven, reorientation of Fe(i)Al(s) pairs between {$\langle$}111{$\rangle$} and {$\langle$}100{$\rangle$} configurations. Levels H1 and H2 are thus ascribed to (Fe(i))2+-(Fe(i))+ transitions at the nearest and next-nearest tetrahedral sites adjacent to aluminum, respectively. A configuration-coordinate (CC) description of the center, based on the simple ionic model of iron-acceptor pairs, is shown to account for all features of the reaction. No very large lattice relaxation is needed to understand the phenomenon. The CC model of the Fe(i)Al(s) pair is then extended to non-purely-ionic defect complexes. A complete new class of metastable centers is thus proposed. Metastable phenomena involving other semiconductor defects (A center in silicon, EL2 center in GaAs, M center in InP) are discussed in the light of these new CC models.},
  file = {/home/arch/Zotero/storage/TMLNV7A3/1985_Metastable-defect_behavior_in.pdf;/home/arch/Zotero/storage/EUD5LB7N/PhysRevB.31.html},
  journal = {Physical Review B},
  keywords = {aluminium boron,defects in semiconductors,InDatabase,silicon,transition metals},
  number = {12}
}

@article{chantre1985a,
  title = {Configurationally Bistable {{C}} Center in Quenched {{Si}}:{{B}}: {{Possibility}} of a Boron-Vacancy Pair},
  shorttitle = {Configurationally Bistable {{C}} Center in Quenched {{Si}}},
  author = {Chantre, Alain},
  year = {1985},
  volume = {32},
  pages = {3687--3694},
  doi = {10.1103/PhysRevB.32.3687},
  abstract = {The C center is an unusual defect found in ultra-fast-quenched (cw laser irradiated) boron-doped silicon. This center introduces two deep donor-hole traps in the band gap, at EV+0.50 eV (H1) and EV+0.36 eV (H2), as revealed by deep-level transient spectroscopy (DLTS). We find that each C center may contribute to either of the two hole-emission signals H1 and H2 in a DLTS scan, but not both, and that the one it contributes to depends upon its charge state during sample cooling down to low temperatures. We present a simple double-site configuration-coordinate model of the defect that explains these unusual observations. In this model, the C center can exist in either of two configurations in both of its charge states; each configuration is stable in one charge state. No very large lattice relaxation effect is involved. The C center is then tentatively identified as a boron-vacancy pair (B-V), a defect which has eluded DLTS detection so far. We show how this microscopic model is supported by the results of previous defect studies in ultra-fast-quenched and electron-irradiated silicon. The two donor levels H1 and H2 are thus tentatively ascribed to next-nearest- and nearest-neighbor B-V pairs, respectively.},
  file = {/home/arch/Zotero/storage/F7H4L4G7/1985_Configurationally_bistable_C.pdf;/home/arch/Zotero/storage/STI5HDXX/PhysRevB.32.html},
  journal = {Physical Review B},
  keywords = {Boron vacancy,defects in semiconductors,DLTS,InDatabase,silicon},
  number = {6}
}

@article{chantre1987,
  title = {Metastable Thermal Donor States in Silicon},
  author = {Chantre, Alain},
  year = {1987},
  volume = {50},
  pages = {1500--1502},
  issn = {0003-6951},
  doi = {10.1063/1.97812},
  file = {/home/arch/Zotero/storage/PK3CL486/1987_Metastable_thermal_donor.pdf;/home/arch/Zotero/storage/424VEM35/1.html},
  journal = {Applied Physics Letters},
  keywords = {oxygen,silicon,thermal donor},
  number = {21}
}

@article{chen1979,
  title = {Titanium in Silicon as a Deep Level Impurity},
  author = {Chen, J. -W. and Milnes, A. G. and Rohatgi, A.},
  year = {1979},
  volume = {22},
  pages = {801--808},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(79)90130-8},
  abstract = {Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 \texttimes{} 1014 cm-3. Hall measurements after diffusion show conversion of lightly doped p type Si to n type due to a Ti donor level at EC - 0.22 eV. In DLTS measurements of n+p structures this level shows as an electron (minority carrier) trap at EC - 0.26 eV with an electron capture cross section of about 3 \texttimes{} 10-15 cm2 at 300\textdegree{}K. The DLTS curves also reveal a hole trap in the p type material. The ep (300/T)2 activation plot gives the level as EV + 0.29 eV. The hole capture cross section is about 1.7 \texttimes{} 10-17 cm2 at 300\textdegree{}K and decreases with decreasing temperature and the corrected trap level becomes EV = 0.26 eV. Ti in lightly doped (360 ohm-cm) n type material does not result in conversion to p type so this level is inferred also to be a donor. A Ti electrically active concentration of about 1.35 \texttimes{} 1013 cm-3 in p type (NA = 3.35 \texttimes{} 1015cm-3) Si results in a minority carrier (electron) lifetime of 50 nsec at 300\textdegree{}K.},
  file = {/home/arch/Zotero/storage/VAXFTZKN/1979_Titanium_in_silicon_as_a_deep.pdf;/home/arch/Zotero/storage/6GUBHZJL/0038110179901308.html},
  journal = {Solid-State Electronics},
  keywords = {carrier lifetime,defects in semiconductors,DLTS,Hall,InDatabase,silicon,titanium},
  number = {9}
}

@article{chen1980,
  title = {Energy {{Levels}} in {{Silicon}}},
  author = {Chen, J W and Milnes, A G},
  year = {1980},
  volume = {10},
  pages = {157--228},
  issn = {0084-6600},
  doi = {10.1146/annurev.ms.10.080180.001105},
  file = {/home/arch/Zotero/storage/HXUDFETB/1980_Energy_Levels_in_Silicon.pdf},
  journal = {Annual Review of Materials Science},
  keywords = {defects in semiconductors,review,silicon,ToGoInDatabase},
  language = {en},
  number = {1}
}

@article{chiavarotti1977,
  title = {Characterisation of Properties of Nickel in Silicon Using Thermally Stimulated Capacitance Method},
  author = {Chiavarotti, G. P. and Conti, M. and Messin, A.},
  year = {1977},
  volume = {20},
  pages = {907--909},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(77)90012-0},
  abstract = {Detailed TSCAP measurements on silicon P+N and N+P diodes confirm the existence of two acceptor levels of nickel lying 0.21 {$\pm$} 0.01 and 0.41 {$\div$} 0.01 eV from the valence and conduction bands respectively. Concentration of these centers, their spatial distribution and behaviours after several annealing treatments are also presented.},
  journal = {Solid-State Electronics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon,TSC},
  number = {11}
}

@article{collins1957,
  title = {Properties of {{Gold}}-{{Doped Silicon}}},
  author = {Collins, C. B. and Carlson, R. O. and Gallagher, C. J.},
  year = {1957},
  volume = {105},
  pages = {1168--1173},
  doi = {10.1103/PhysRev.105.1168},
  abstract = {Measurements of the temperature dependence of resistivity and Hall coefficient in gold-doped silicon show an acceptor level at 0.54 ev from the conduction band and a donor level at 0.35 ev from the valence band. These levels appear in equal concentrations within experimental error. The location of these levels is supported by photoconductivity measurements. A search was made for other levels associated with gold centers but none were found. The distribution coefficient for gold in silicon is 2.5\texttimes{}10-5. Gold was introduced into the crystals by growing from a gold-doped melt and by diffusion into single crystals at high temperatures. The concentrations of gold observed in solution after saturation at various temperatures is consistent with that expected from the distribution coefficient. Gold acts as a recombination center detectable at concentrations as low as 1012 per cm3. Because the acceptor level is so close to the center of the forbidden band, it is possible to shift the Fermi level below the middle with large ratios of gold to residual donors. The acceptor level is measured in p-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.},
  file = {/home/arch/Zotero/storage/NFRFR9AX/1957_Properties_of_Gold-Doped.pdf},
  journal = {Physical Review},
  keywords = {defects in semiconductors,gold,hall coefficient,silicon},
  number = {4}
}

@article{collins1957a,
  title = {Properties of {{Silicon Doped}} with {{Iron}} or {{Copper}}},
  author = {Collins, C. B. and Carlson, R. O.},
  year = {1957},
  volume = {108},
  pages = {1409--1414},
  doi = {10.1103/PhysRev.108.1409},
  abstract = {Iron introduces a donor level into silicon at 0.40 ev from the valence band observed both in crystals doped in the melt and in crystals into which iron was diffused at 1200\textdegree{}C. This level converts anomalously to a level 0.55 ev from the conduction band on standing at room temperature. The conversion is reversible in the range {$\sim$}70\textdegree{}-200\textdegree{}C; above 200\textdegree{}C, the electrical activity of iron irreversibly disappears. No evidence for acceptor action of iron was found. The electrically active solubility of iron, 1.5\texttimes{}1016 cm-3 at 1200\textdegree{}C, is higher than the radiotracer solubility but the former was measured in more rapidly quenched samples. The distribution coefficient is 8\texttimes{}10-6. Preferential trapping of electrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers. Lifetime studies by the photoconductive decay method indicated a larger capture cross section for electrons than for holes.},
  file = {/home/arch/Zotero/storage/DEAHZDSS/1957_Properties_of_Silicon_Doped.pdf},
  journal = {Physical Review},
  keywords = {Cu,defects in semiconductors,Fe,hall coefficient,silicon},
  number = {6}
}

@article{conzelmann1983,
  title = {Chromium and Chromium-Boron Pairs in Silicon},
  author = {Conzelmann, H. and Graff, K. and Weber, E. R.},
  year = {1983},
  volume = {30},
  pages = {169--175},
  doi = {10.1007/BF00620536},
  file = {/home/arch/Zotero/storage/DRRSD4BK/1983_Chromium_and_chromium-boron.pdf},
  journal = {Applied Physics A Solids and Surfaces},
  keywords = {DLTS,EPR,luminescence,neutron activation analysis},
  number = {3}
}

@article{cox2014,
  title = {Detection of a {{Molybdenum Acceptor Level}} in {{N}}-{{Type Silicon}}},
  author = {Cox, Steven M.},
  year = {2014},
  volume = {3},
  pages = {P397-P402},
  issn = {2162-8769, 2162-8777},
  doi = {10.1149/2.0081412jss},
  abstract = {The detection of Mo in n-type Si has been reported in only a few references. An unidentified peak was detected in an n-type epitaxial layer by DLTS with an activation energy and capture cross-section of 0.255 eV and 3.5 \texttimes{} 10-16 cm2, respectively. These results were consistent with measurements of n-type silicon implanted with Mo. A p-type epitaxial wafer was exposed to the same epitaxial growth environment resulting in the detection of the Mo-d level, thus confirming the Mo contamination. The change in the enthalpy of the capture of electrons into the unidentified level was 14 meV resulting in the majority carrier capture cross-section being determined to be 1.2 \texttimes{} 10-16 cm2 assuming a multi-phonon process. Using the activation energy and enthalpy change of capture cross-section data, the change in Gibbs free energy as a function of temperature was calculated to be Ec-0.269 eV. Poole-Frenkel effect measurements determined the deep level to be an acceptor-like state. The total change in entropy was determined to be 1k, the first reported total entropy change for an acceptor level of a 4d transition metal. The measured enthalpy energy was in reasonable agreement with the reported theoretical calculation of a substitution Mo-a deep level.},
  file = {/home/arch/Zotero/storage/SP7V9JPL/2014_Detection_of_a_Molybdenum.pdf;/home/arch/Zotero/storage/2DR8573E/P397.html},
  journal = {ECS Journal of Solid State Science and Technology},
  language = {en},
  number = {12}
}

@article{czaputa1983,
  title = {Energy Levels of Interstitial Manganese in Silicon},
  author = {Czaputa, R. and Feichtinger, H. and Oswald, J.},
  year = {1983},
  volume = {47},
  pages = {223--226},
  issn = {00381098},
  doi = {10.1016/0038-1098(83)90549-5},
  file = {/home/arch/Zotero/storage/E3V9GIC7/1983_Energy_levels_of_interstitial.pdf},
  journal = {Solid State Communications},
  keywords = {defects in semiconductors,InDatabase,manganese,silicon},
  language = {en},
  number = {4}
}

@article{davis1959,
  title = {Lifetimes and {{Capture Cross Sections}} in {{Gold}}-{{Doped Silicon}}},
  author = {Davis, W. D.},
  year = {1959},
  volume = {114},
  pages = {1006--1008},
  doi = {10.1103/PhysRev.114.1006},
  abstract = {The free lifetimes of electrons and holes in gold-doped silicon were determined by applying an electric field and measuring the amplitude of the pulses produced by {$\alpha$}-particles. Knowing the impurity concentrations and assuming that the lifetimes is determined primarily by capture at the gold-sites, the cross sections for capture were calculated. The value for either electrons or holes at neutral gold sites is 2\texttimes{}10-15 cm2 and at oppositely-charged sites, 1\texttimes{}10-13 cm2.},
  file = {/home/arch/Zotero/storage/LXTVHMXB/1959_Lifetimes_and_Capture_Cross.pdf;/home/arch/Zotero/storage/4KMRS4U5/PhysRev.114.html},
  journal = {Physical Review},
  number = {4}
}

@article{davis1980,
  title = {Impurities in Silicon Solar Cells},
  author = {Davis, J. R. and Rohatgi, A. and Hopkins, R. H. and Blais, P. D. and {Rai-Choudhury}, P. and McCormick, J. R. and Mollenkopf, H. C.},
  year = {1980},
  volume = {27},
  pages = {677--687},
  issn = {0018-9383},
  doi = {10.1109/T-ED.1980.19922},
  abstract = {The effects of various metallic impurities, both singly and in combinations, on the performance of silicon solar cells have been studied. Czochralski crystals were grown with controlled additions of secondary impurities. The primary dopants were boron and phosphorus while the secondaires were: A1, B, C, Ca, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, P, Pd, Ta, Ti, V, W, Zn, and Zr. Impurity concentrations ranged from 1010to 1017/cm3. Solar cells were made using a conventional diffusion process and were characterized by computer reduction ofI-Vdata. The collected data indicated that impurity-induced performance loss was primarily due to reduction of the base diffusion length. Based on this observation, an analytic model was developed which predicts cell performance as a function of the secondary impurity concentrations. The calculated performance parameters are in good agreement with measured values except for Cu, Ni, and Fe, which at higher concentrations, degrade the cell substantially by means of junction mechanisms. This behavior can be distinguished from base diffusion length effects by careful analysis of theI-Vdata. The effects of impurities in n-base and p-base devices differ in degree but submit to the same modeling analysis. A comparison of calculated and measured performance for multiple impurities indicates a limited interaction between impurities, e.g., copper appears to improve titanium-doped cells.},
  file = {/home/arch/Zotero/storage/QUNQVQSF/1980_Impurities_in_silicon_solar.pdf;/home/arch/Zotero/storage/ICM779DP/1480715.html},
  journal = {IEEE Transactions on Electron Devices},
  keywords = {defects in semiconductors,diffusivity,InDatabase,segragation coefficient,Si,Solar cells},
  number = {4}
}

@article{deixler1998,
  title = {Laplace-Transform Deep-Level Transient Spectroscopy Studies of the {{G4}} Gold\textendash{}Hydrogen Complex in Silicon},
  author = {Deixler, P. and Terry, J. and Hawkins, I. D. and {Evans-Freeman}, J. H. and Peaker, A. R. and Rubaldo, L. and Maude, D. K. and Portal, J.-C. and Dobaczewski, L. and Bonde Nielsen, K. and Nylandsted Larsen, A. and Mesli, A.},
  year = {1998},
  volume = {73},
  pages = {3126--3128},
  issn = {0003-6951},
  doi = {10.1063/1.122694},
  file = {/home/arch/Zotero/storage/HQZGXC8K/1998_Laplace-transform_deep-level.pdf;/home/arch/Zotero/storage/X9Q749BB/1.html},
  journal = {Applied Physics Letters},
  keywords = {gold,gold hydrogen,InDatabase},
  number = {21}
}

@inproceedings{diez2005,
  title = {Analysing Defects in Silicon by Temperature- and Injection-Dependent Lifetime Spectroscopy ({{T}}-{{IDLS}})},
  booktitle = {20th {{European Photovoltaic Solar Energy Conference}} 2005},
  author = {Diez, S. and Rein, S. and Glunz, S. W.},
  year = {2005},
  pages = {1216--1219},
  file = {/home/arch/Zotero/storage/7UPMSG8T/2005Analysing_defects_in_silicon_by.pdf;/home/arch/Zotero/storage/YCS7ZWXI/N-50177.html},
  isbn = {3-936338-20-5},
  keywords = {defects in semiconductors,InDatabase,LS-I,LS-T,silicon,tungsten}
}

@article{diez2007,
  title = {Cobalt Related Defect Levels in Silicon Analyzed by Temperature- and Injection-Dependent Lifetime Spectroscopy},
  author = {Diez, S. and Rein, S. and Roth, T. and Glunz, S. W.},
  year = {2007},
  volume = {101},
  pages = {033710},
  issn = {0021-8979},
  doi = {10.1063/1.2433743},
  file = {/home/arch/Zotero/storage/KES2C5TM/2007_Cobalt_related_defect_levels.pdf;/home/arch/Zotero/storage/58NG88NR/1.html},
  journal = {Journal of Applied Physics},
  number = {3}
}

@article{engstrom1975,
  title = {Thermal Activation Energy of the Gold-acceptor Level in Silicon},
  author = {Engstr{\"o}m, O. and Grimmeiss, H. G.},
  year = {1975},
  volume = {46},
  pages = {831--837},
  issn = {0021-8979},
  doi = {10.1063/1.321653},
  file = {/home/arch/Zotero/storage/TLLAIXDZ/1975Thermal_activation_energy_of_the.pdf;/home/arch/Zotero/storage/WF7SGGPG/1975Thermal_activation_energy_of_the.pdf;/home/arch/Zotero/storage/JYGGDI7I/1.html;/home/arch/Zotero/storage/ZQ7CDF4K/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {2}
}

@article{evwaraye1977,
  title = {Annealing of Irradiation-induced Defects in Arsenic-doped Silicon},
  author = {Evwaraye, A. O.},
  year = {1977},
  volume = {48},
  pages = {1840--1843},
  issn = {0021-8979},
  doi = {10.1063/1.323935},
  file = {/home/arch/Zotero/storage/H8UVYT9K/1977_Annealing_of.pdf;/home/arch/Zotero/storage/VAQYPDFT/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {5}
}

@article{evwaraye1977a,
  title = {The Defect Levels in P-type Silicon Doped with Manganese},
  author = {Evwaraye, A. O.},
  year = {1977},
  volume = {48},
  pages = {3813--3818},
  issn = {0021-8979},
  doi = {10.1063/1.324247},
  file = {/home/arch/Zotero/storage/I7T2SX2Q/1977_The_defect_levels_in_p‐type.pdf;/home/arch/Zotero/storage/QM3VY4QH/1.html},
  journal = {Journal of Applied Physics},
  keywords = {ToGoInDatabase},
  number = {9}
}

@article{evwaraye1978,
  title = {Impurity States in Cobalt-Doped Silicon},
  author = {Evwaraye, A. O.},
  year = {1978},
  volume = {7},
  pages = {383--401},
  issn = {1543-186X},
  doi = {10.1007/BF02655644},
  abstract = {Cobalt was diffused into p+ pn+ silicon structures at 900\textdegree{} and 1150\textdegree{}C for 2-4 hours followed by various quenching conditions. Four primary hole traps and two electron traps associated with cobalt in these devices were observed. The hole traps are labeled H1(Ev + 0.22 eV), H2(Ev + 0.29 eV), H3 (Ev + 0.40 eV) and H4(Ev + 0.45 eV) while the electron traps labeled E1 and E2 are located at Ec - 0.36 eV and Ec - 0.44 eV, respectively. The concentrations, thermal emission rates, and the capture cross sections for the majority carriers at these defects are reported. The behavior of these defects under heat treatment and the emergence of secondary defects, H5(Ev +0.22 eV) and H6 (Ev +0.34 eV), will be discussed.},
  file = {/home/arch/Zotero/storage/HCCTVRB6/1978_Impurity_states_in.pdf},
  journal = {Journal of Electronic Materials},
  keywords = {DLTS,InDatabase,Irradiation-Induced Defects,Negative Photoconductivity,silicon,ToGoInDatabase},
  language = {en},
  number = {3}
}

@article{fairfield1965,
  title = {Gold as a Recombination Centre in Silicon},
  author = {Fairfield, J. M. and Gokhale, B. V.},
  year = {1965},
  volume = {8},
  pages = {685--691},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(65)90036-5},
  abstract = {The recombination of holes and electrons through gold centres in silicon involves two recombination energy levels, a donor and an acceptor, and four capture probabilities. By comparing the low-level photoconductivity decay of gold-doped silicon samples with a theoretical expression derived from a transient solution of the recombination problem, we have determined the following values for these probabilities: Acceptor levelDonor level{$\alpha$}n = 1{$\cdot$}65 \texttimes{} 10-9 cm3/sec{$\beta$}n = 6{$\cdot$}3 \texttimes{} 10-8 cm3/sec{$\alpha$}p = 1{$\cdot$}15 \texttimes{} 10-7 cm3/sec{$\beta$}p = 2{$\cdot$}4 \texttimes{} 10-8 cm3/sec These results have been used to calculate, under high-level conditions, minority carrier lifetimes, which have then been compared with such lifetimes determined empirically from diode storage time measurements. Good agreement has been found, indicating that diode storage times can be successfully predicted.
R{\'e}sum{\'e}
La recombinaison des {\'e}lectrons et trous {\`a} travers les centres d'or dans le silicium comprend deux niveaux d'{\'e}nergie de recombinaison, un donneur et un accepteur et quatre probabilit{\'e}s de capture. En comparant la d{\'e}sint{\'e}gration photoconductive {\`a} niveaux bas d'{\'e}chantillons de silicium {\`a} dope d'or avec une expression th{\'e}orique deriv{\'e}e de la solution transitoire du probl{\`e}me de recombinaison, nous avons d{\'e}termin{\'e} les valeurs suivantes pour ces probabilit{\'e}s: Niveau d'accepteurNiveau de donneur{$\alpha$}n = 1,65 \texttimes{} 10-9 cm3/sec{$\beta$}n = 6,3 \texttimes{} 10-8 cm3/sec{$\alpha$}p = 1,15 \texttimes{} 10-7 cm3/sec{$\beta$}p = 2,4 \texttimes{} 10-8 cm3/sec Ces r{\'e}sultats ont {\'e}t{\'e} employ{\'e}s pour calculer, {\`a} r{\'e}gime de hauts niveaus, la dur{\'e}e de vie de porteurs minoritaires qui ont {\'e}t{\'e} ensuite compar{\'e}es avec des dur{\'e}es de vie d{\'e}termin{\'e}es empiriquement des mesures des temps d'emmagasisnement des diodes. Un bon accord a {\'e}t{\'e} trouv{\'e} indiquant que les temps d'emmagasinement peuvent {\^e}tre pr{\'e}dits correctement.
Zusammenfassung
Die Rekombination von L{\"o}chern und Elektronen durch Goldzentren in Silizium ist bestimmt durch zwei Rekombinations-Energieniveaus, n{\"a}mlich einen Donator und einen Akzeptor, sowie vier Einfangwahrscheinlichkeiten. Durch Vergleichen des Abklingens der Photoleitf{\"a}higkeit bei kleiner Tr{\"a}gerkonzentration in golddotierten Siliziumproben mit einem theoretischen Ausdruck, der von einer nichstation{\"a}ren L{\"o}sung des Rekombinationsproblems abgeleitet wurde, haben wir folgende Werte f{\"u}r diese Wahrscheinlichkeiten bestimmt: AkzeptorniveauDonatorniveau{$\alpha$}n = 1,65 \texttimes{} 10-9cm3/sec{$\beta$}n = 6,3 \texttimes{} 10-8cm3/sec{$\alpha$}p = 1,15 \texttimes{} 10-7cm3/sec{$\beta$}p = 2,4 \texttimes{} 10-8cm3/sec Diese Ergebnisse wurden benutzt, um bei grosser Tr{\"a}gerkonzentration die Lebensdauer von Minorit{\"a}tstr{\"a}gern zu ermitteln, die dann mit den Lebensdauern verglichen wurden, die empirisch aus Messungen der Dioden-Speicherzeit bestimmt wurden. Es wurde eine gute {\"U}bereinstimmung gefunden, die beweist, dass die Speicherzeit von Dioden mit Erfolg vorhergesagt werden kann.},
  file = {/home/arch/Zotero/storage/Z4UB962T/1965_Gold_as_a_recombination.pdf},
  journal = {Solid-State Electronics},
  keywords = {gold,InDatabase,silicon},
  number = {8}
}

@article{fan1956,
  title = {Infra-Red {{Absorption}} in {{Semiconductors}}},
  author = {Fan, H. Y.},
  year = {1956},
  volume = {19},
  pages = {107},
  issn = {0034-4885},
  doi = {10.1088/0034-4885/19/1/304},
  abstract = {Infra-red absorption in semiconductors is classified into four different types according to the mechanism: (i) intrinsic absorption associated with electron excitation across the energy gap; (ii) absorption due to the presence of free carriers; (iii) absorption associated with impurities or lattice defects; and (iv) absorption associated with lattice vibration. A general introduction is followed by some theoretical discussions. Electron excitation between different energy bands is discussed with emphasis on the intrinsic absorption edge. For the absorption by free carriers, the effects of electron scattering by lattice vibration and by impurity centres are considered. Absorption associated with localized electronic states is briefly discussed. Experimental results are discussed for four different semiconductors: germanium, silicon, indium antimonide, and tellurium. All four types of absorption have been investigated to some extent for germanium and silicon. The work done on these materials provides a pattern for infra-red studies on semiconductors. The absorption edge in indium antimonide is affected by the carrier concentration. Long wave-length absorption shows interesting behaviour, and the observed effects attributed to lattice vibration have provided information regarding the type of binding in the crystal. Tellurium, having an optical axis, is doubly refracting. Both the absorption edge and the absorption associated with free carriers depend on the direction of polarization of the radiation.},
  file = {/home/arch/Zotero/storage/53H6CU3Y/1956_Infra-red_Absorption_in.pdf},
  journal = {Reports on Progress in Physics},
  keywords = {photon,ToGoInDatabase},
  language = {en},
  number = {1}
}

@article{feichtinger1981,
  title = {Energy Levels and Solubility of Interstitial Chromium in Silicon},
  author = {Feichtinger, H. and Czaputa, R.},
  year = {1981},
  volume = {39},
  pages = {706--708},
  issn = {0003-6951},
  doi = {10.1063/1.92856},
  file = {/home/arch/Zotero/storage/EQG4IM25/1981Energy_levels_and_solubility.pdf;/home/arch/Zotero/storage/KHAKR8KM/1.html},
  journal = {Applied Physics Letters},
  keywords = {chromium,defects in semiconductors,EPR,Hall,silicon,solubility},
  number = {9}
}

@article{gao1991,
  title = {Annealing and Profile of Interstitial Iron in Boron-doped Silicon},
  author = {Gao, X. and Mollenkopf, H. and Yee, S.},
  year = {1991},
  volume = {59},
  pages = {2133--2135},
  issn = {0003-6951},
  doi = {10.1063/1.106103},
  file = {/home/arch/Zotero/storage/KAGXYTPI/1991Annealing_and_profile_of.pdf;/home/arch/Zotero/storage/4XVM56PH/1.html},
  journal = {Applied Physics Letters},
  keywords = {defects in semiconductors,DLTS,InDatabase,iron,silicon},
  number = {17}
}

@article{gerson1977,
  title = {A Quenched-in Defect in Boron-doped Silicon},
  author = {Gerson, J. D. and Cheng, L. J. and Corbett, J. W.},
  year = {1977},
  volume = {48},
  pages = {4821--4822},
  issn = {0021-8979},
  doi = {10.1063/1.323505},
  file = {/home/arch/Zotero/storage/JSGVSAQ8/1977_A_quenched‐in_defect_in.pdf;/home/arch/Zotero/storage/699AHKC4/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,FeB},
  number = {11}
}

@article{glmiller1977,
  title = {Capacitance {{Transient Spectroscopy}}},
  author = {G L Miller and D V Lang and Kimerling, {and} L. C.},
  year = {1977},
  volume = {7},
  pages = {377--448},
  doi = {10.1146/annurev.ms.07.080177.002113},
  file = {/home/arch/Zotero/storage/PIM9U8QB/1977_Capacitance_Transient.pdf},
  journal = {Annual Review of Materials Science},
  keywords = {DLTS,GaAs,InDatabase,review,Si,vacancies},
  number = {1}
}

@article{graff1981,
  title = {The {{Properties}} of {{Iron}} in {{Silicon}}},
  author = {Graff, K. and Pieper, H.},
  year = {1981},
  volume = {128},
  pages = {669--674},
  issn = {0013-4651, 1945-7111},
  doi = {10.1149/1.2127478},
  abstract = {The properties of iron in n-type and p-type silicon were studied by means of DLTS, carrier lifetime measurements, and infrared absorption spectroscopy. Only one donor level was observed, situated at and correlated to iron on an interstitial site. In p-Si:B iron-boron pairs were formed at room temperature. Their activation energy was determined to be . The reaction proceeded in two phases. In the second phase a thermal equilibrium between iron and iron-boron pairs was found which could be shifted by annealing and illuminating the specimen, respectively. In aluminum-doped silicon crystals two levels were observed after iron diffusion correlated to iron-aluminum pairs. Their activation energies were determined to be . It is assumed that iron-boron pairs form also two levels, a donor and an acceptor. The acceptor must be situated in the upper half of the silicon bandgap. Reaction mechanisms are discussed.},
  file = {/home/arch/Zotero/storage/2AWIYBEM/1981_The_Properties_of_Iron_in.pdf;/home/arch/Zotero/storage/68IN34BV/669.html},
  journal = {Journal of The Electrochemical Society},
  keywords = {carrier lifetime,defects in semiconductors,DLTS,haze,InDatabase,infrared spectra,iron‐aluminum pairs,iron‐boron pairs,room temperature impurity reactions,silicon},
  language = {en},
  number = {3}
}

@inproceedings{graff1981a,
  title = {The Behavior of Transition and Nobe Metals in Silicon Crystals},
  booktitle = {Semiconductor {{Silicon}} 1981},
  author = {Graff, K. and {H. Pieper}},
  year = {1981},
  pages = {331--343},
  publisher = {{The Electrochemical Society}},
  address = {{Minneapolis}},
  issn = {0091-391X},
  abstract = {The 3d transition metals from Ti to Ni and the noble
metals Cu, Ag, Au were diffused intentionally into si
licon crystals. The precipitation of the elements at the
surface of the wafer was examined and DLTS spectra
were recorded. The concentration of electrically active
defects due to the transition metals diffused at a certain
temperature increased with increasing atomic numbers.
In Ti-, V-, and Mn-doped silicon three deep levels of
equal concentrations were found which were explained
as different charge states. Cr, Fe , Ni and Cu formed
only one donor in silicon. Their activation energies de
creased with increasing atomic number. Ag and Au formed
two levels after diffusion into silicon. Measured majority
carrier cross -sections of the various transition metals
showed a functional dependence on the respective activation
energies for equal charge states. Room temperature reac
tions were observed in Fe- and Cr-doped specimens.},
  lccn = {TK 7871-85-1638 1981}
}

@book{graff1995,
  title = {Metal {{Impurities}} in {{Silicon}}-{{Device Fabrication}}},
  author = {Graff, Klaus},
  editor = {Queisser, Hans-Joachim and Gonser, U. and Osgood, R. M. and Panish, M. B. and Sakaki, H. and Lotsch, Helmut K. V.},
  year = {1995},
  volume = {24},
  publisher = {{Springer Berlin Heidelberg}},
  address = {{Berlin, Heidelberg}},
  doi = {10.1007/978-3-642-97593-6},
  file = {/home/arch/Zotero/storage/FH254BX9/1995Metal_Impurities_in_Silicon-Device.pdf},
  isbn = {978-3-642-97595-0 978-3-642-97593-6},
  series = {Springer {{Series}} in {{Materials Science}}}
}

@book{graff2000,
  title = {Metal {{Impurities}} in {{Silicon}}-{{Device Fabrication}}},
  author = {Graff, Klaus},
  editor = {Hull, Robert and Osgood, R. M. and Sakaki, H. and Zunger, Alex},
  year = {2000},
  volume = {24},
  publisher = {{Springer Berlin Heidelberg}},
  address = {{Berlin, Heidelberg}},
  doi = {10.1007/978-3-642-57121-3},
  file = {/home/arch/Zotero/storage/IMHXETBE/2000Metal_Impurities_in_Silicon-Device.pdf},
  isbn = {978-3-642-62965-5 978-3-642-57121-3},
  series = {Springer {{Series}} in {{Materials Science}}}
}

@article{grimmeiss1980,
  title = {Deep Sulfur-related Centers in Silicon},
  author = {Grimmeiss, H. G. and Janz{\'e}n, E. and Skarstam, B.},
  year = {1980},
  volume = {51},
  pages = {4212--4217},
  issn = {0021-8979},
  doi = {10.1063/1.328279},
  file = {/home/arch/Zotero/storage/T8K35VZE/1980_Deep_sulfur‐related_centers.pdf;/home/arch/Zotero/storage/KRQ6HSGZ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon,sulfure},
  number = {8}
}

@article{grimmeiss1980a,
  title = {Electronic Properties of Selenium-doped Silicon},
  author = {Grimmeiss, H. G. and Janz{\'e}n, E. and Skarstam, B.},
  year = {1980},
  volume = {51},
  pages = {3740--3745},
  issn = {0021-8979},
  doi = {10.1063/1.328161},
  file = {/home/arch/Zotero/storage/Q2NG6BJ8/1980Electronic_properties_of_selenium‐doped.pdf;/home/arch/Zotero/storage/RQP64YTK/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,InDatabase,selenium},
  number = {7}
}

@article{guldberg1977,
  title = {Electron Trap Annealing in Neutron Transmutation Doped Silicon},
  author = {Guldberg, J.},
  year = {1977},
  volume = {31},
  pages = {578--579},
  issn = {0003-6951},
  doi = {10.1063/1.89785},
  file = {/home/arch/Zotero/storage/TURM28IP/1977_Electron_trap_annealing_in.pdf;/home/arch/Zotero/storage/H2RTAQU2/1.html},
  journal = {Applied Physics Letters},
  keywords = {defects in semiconductors,InDatabase,irridation,silicon},
  number = {9}
}

@article{gwozdz2019,
  title = {Detection of {{Sulfur}}-{{Related Defects}} in {{Sulfur Diffused}} n- and p-{{Type Si}} by {{DLTS}}},
  author = {Gwozdz, Katarzyna and Kolkovsky, Vladimir and Weber, Joerg and Yakovleva, Anastasia A. and Astrov, Yuri A.},
  year = {2019},
  volume = {216},
  pages = {1900303},
  issn = {1862-6319},
  doi = {10.1002/pssa.201900303},
  abstract = {Sulfur is diffused into Czochralski (CZ) and Float-Zone (FZ) silicon wafers at 1200 \textdegree{}C for 30 h. After diffusion, the wafers are slowly cooled in air. Several defect levels are observed by deep level transient spectroscopy (DLTS) in n- and p-type samples. All defects levels are related to sulfur defects, but none could be identified with the donor and double donor states of substitutional S or molecular S2. Additional annealing of the samples at 300 \textdegree{}C generates four DLTS levels in n-type Si and no peaks in p-type Si. The enhancement of the emission rate with the electrical field confirm their donor and double donor-like behavior. The authors identify the four DLTS levels in the annealed n-type Si samples with the different charge states of monoatomic S and molecular S2 (S0, S+, S20, and S2+) defects in Si. Hydrogenation of the annealed samples by wet chemical etching results in a reduction of the intensity of S0, S+, S20, and S2+ due to a passivation of these defects. The authors did not observe any electrically active SH-complexes in the hydrogenated samples.},
  copyright = {\textcopyright{} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  file = {/home/arch/Zotero/storage/9YQDZXMD/Gwozdz et al. - 2019 - Detection of Sulfur-Related Defects in Sulfur Diff.pdf;/home/arch/Zotero/storage/9EYGP5RH/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {defects,DLTS,InDatabase,Laplace DLTS,silicon,sulfur},
  language = {en},
  number = {17}
}

@article{hamaguchi1991,
  title = {Deep {{Levels Associated}} with {{Molybdenum}} in {{Silicon}}},
  author = {Hamaguchi, Toshiaki and Hayamizu, Yoshinori},
  year = {1991},
  volume = {30},
  pages = {L1837},
  issn = {1347-4065},
  doi = {10.1143/JJAP.30.L1837},
  file = {/home/arch/Zotero/storage/7E4SZXET/1991_Deep_Levels_Associated_with.pdf;/home/arch/Zotero/storage/87KSQJ89/meta.html},
  journal = {Japanese Journal of Applied Physics},
  language = {en},
  number = {11A}
}

@article{hangleiter1987,
  title = {Nonradiative Recombination via Deep Impurity Levels in Silicon: {{Experiment}}},
  shorttitle = {Nonradiative Recombination via Deep Impurity Levels in Silicon},
  author = {Hangleiter, Andreas},
  year = {1987},
  volume = {35},
  pages = {9149--9161},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.35.9149},
  file = {/home/arch/Zotero/storage/LH5CK4TB/1987_Nonradiative_recombination.pdf},
  journal = {Physical Review B},
  language = {en},
  number = {17}
}

@article{herman1972,
  title = {Thermal Ionization Rates and Energies of Holes at the Double Acceptor Zinc Centers in Silicon},
  author = {Herman, J. M. and Sah, C. T.},
  year = {1972},
  volume = {14},
  pages = {405--415},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210140203},
  abstract = {The thermal emission rates and activation energies of holes trapped at the neutral and singly ionized zinc centers are measured using the dark capacitance and current transient techniques in n+\textendash{}p junctions. The thermal activation energies of holes from these centers are 316 and 617 meV, respectively. Detailed electric field dependences of the thermal emission rates are obtained using a differential bias voltage technique. The thermal emission rate of holes from neutral zinc centers exhibits a very large field dependence, while that from singly ionized zinc centers is small. A second zinc-related center, which is attributed to the previously reported acceptorlike, zinc\textendash{}-boron complex, is studied. The thermal activation energy of trapped holes from this center is 167 meV.},
  copyright = {Copyright \textcopyright{} 1972 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/SDBE4G85/1972_Thermal_ionization_rates_and.pdf;/home/arch/Zotero/storage/A8CKCCJ6/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon,Thermal capture of electrons and holes at zinc centers in silicon},
  language = {en},
  number = {2}
}

@article{herring2001,
  title = {Energy Levels of Isolated Interstitial Hydrogen in Silicon},
  author = {Herring, Conyers and Johnson, N. M. and {Van de Walle}, Chris G.},
  year = {2001},
  volume = {64},
  pages = {125209},
  doi = {10.1103/PhysRevB.64.125209},
  abstract = {This paper first describes the quantitative determination of the static and dynamic properties of the locally stable states of monatomic hydrogen dissolved in crystalline silicon: H+, H0, and H-. The monatomic hydrogens were created controllably near room temperature by using hole-stimulated dissociation of phosphorus-hydrogen (PH) complexes. Drift velocities and charge-change rates were studied via time-resolved capacitance-transient measurements in Schottky diodes under changes of bias. These data enable the donor level {$\varepsilon$}D of 2H to be located at {$\sim$}0.16 eV below the conduction band (confirming that the E3{${'}$} center found in proton-implanted Si corresponds to interstitial H in undamaged Si), and the acceptor level {$\varepsilon$}A at {$\sim$}0.07 eV below midgap, so that hydrogen is a ``negative-U'' system. The experimental values of {$\varepsilon$}D and {$\varepsilon$}A are consistent with predictions from first-principles calculations, which also provide detailed potential-energy surfaces for hydrogen in each charge state. While the phonon-mediated reaction H0\textrightarrow{}H++e- is fast, the reaction H-\textrightarrow{}H0+e- has an activation energy {$\sim$}0.84 eV, well above the energy difference ({$\sim$}0.47 eV) between initial and final states. Our experiments also yielded diffusion coefficients near room temperature for 1H+, 2H+, and 2H-. The asymmetrical positioning of {$\varepsilon$}D and {$\varepsilon$}A in the gap accounts for many previously unexplained effects. For example, it is shown to be responsible for the much greater difficulty of passivating phosphorus-doped than comparably boron-doped Si. And while modest hole concentrations dissociate PH complexes rapidly at temperatures where thermal dissociation takes years, we could not detect an analogous dissociation of BH complexes by minority electrons, a process that is expected to be frustrated by the rapid thermal ionization of H0. The distribution of hydrogen in n-on-n epitaxial layers hydrogenated at 300 \textdegree{}C can be accounted for if the donor-hydrogen complexes are in thermal equilibrium with H2 complexes whose binding energy (relative to H++H-) is of the order of 1.75 eV. With this binding energy, the measured migration of H2 at 200 \textdegree{}C and below must be by diffusion without dissociation.},
  file = {/home/arch/Zotero/storage/RVD6RXYH/2001_Energy_levels_of_isolated.pdf;/home/arch/Zotero/storage/NRW95JI8/PhysRevB.64.html},
  journal = {Physical Review B},
  number = {12}
}

@article{holm1991,
  title = {Deep State of Hydrogen in Crystalline Silicon: {{Evidence}} for Metastability},
  shorttitle = {Deep State of Hydrogen in Crystalline Silicon},
  author = {Holm, B. and Bonde Nielsen, K. and Bech Nielsen, B.},
  year = {1991},
  volume = {66},
  pages = {2360--2363},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.66.2360},
  file = {/home/arch/Zotero/storage/7G6VM7CP/1991_Deep_state_of_hydrogen_in.pdf},
  journal = {Physical Review Letters},
  keywords = {DLTS,hydrogen,interstital hydrogen,metastale},
  language = {en},
  number = {18}
}

@article{indusekhar1986,
  title = {Investigation of {{Deep Defects Due}} to {$\alpha$}-{{Particle Irradiation}} in n-{{Silicon}}},
  author = {Indusekhar, H. and Kumar, V. and Sengupta, D.},
  year = {1986},
  volume = {93},
  pages = {645--653},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210930230},
  abstract = {Electrical properties of deep defects induced in n-silicon by {$\alpha$}-particles of about 10 MeV energy at a dose of 1014 and 1015 cm-2 are studied by DLTS. The levels at Ec -0.18 eV, Ec -0.26 eV, and Ec -0.48 eV are identified as A center, V2 (=/-) and V2 (-/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec -0.28 eV and Ec -0.51 eV could not be related to any known center.},
  copyright = {Copyright \textcopyright{} 1986 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/F37F26FU/1986_Investigation_of_Deep_Defects.pdf;/home/arch/Zotero/storage/ADQ8YD3Y/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  language = {en},
  number = {2}
}

@article{indusekhar1986a,
  title = {Properties of Iron Related Quenched-in Levels in p-Silicon},
  author = {Indusekhar, H. and Kumar, V.},
  year = {1986},
  volume = {95},
  pages = {269--278},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210950134},
  abstract = {The electrical and optical properties of the thermally induced quenched-in levels in p-silicon which have heen attributed to iron are studied. The two levels, HI and H2, are located at Ev + 0.42 eV and Ev + 0.52 eV, respectively, as determined by TSCAP, DLTS, and transient photocapacitance methods. The photoionization cross sections are well described by Lucovsky's model. The hole capture by H1 is temperature dependent; a barrier of 40 meV is measured. However, multiphonon emission mechanism cannot be invoked to explain this temperature dependence due to the inferred zero lattice relaxation. The source of iron contamination is found to be the ambient conditions, in particular the quartz tube. The conflicting reports regarding the stability and the variation in the reported capture cross section values suggests that the observed Ev + 0.4 eV level must be a complex centre. The inferred near zero lattice relaxation during the electron transition implies weak coupling to the host lattice.},
  copyright = {Copyright \textcopyright{} 1986 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/UJKDI6DR/1986Properties_of_iron_related_quenched-in.pdf;/home/arch/Zotero/storage/3NYSV5D9/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {InDatabase,iron,optical capture cross sections},
  language = {en},
  number = {1}
}

@article{inglese2016,
  title = {Recombination Activity of Light-Activated Copper Defects in p-Type Silicon Studied by Injection- and Temperature-Dependent Lifetime Spectroscopy},
  author = {Inglese, Alessandro and Lindroos, Jeanette and Vahlman, Henri and Savin, Hele},
  year = {2016},
  volume = {120},
  pages = {125703},
  issn = {0021-8979},
  doi = {10.1063/1.4963121},
  abstract = {The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley\textemdash{}Read\textemdash{}Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec-Et=0.48-0.62\,eVEc-Et=0.48-0.62\,eV{$<$}math display="inline" overflow="scroll" altimg="eq-00001.gif"{$><$}mrow{$><$}msub{$><$}mrow{$><$}mi{$>$}E{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi{$>$}c{$<$}/mi{$><$}/mrow{$><$}/msub{$><$}mo{$>-<$}/mo{$><$}msub{$><$}mrow{$><$}mi{$>$}E{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi{$>$}t{$<$}/mi{$><$}/mrow{$><$}/msub{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}0.48{$<$}/mn{$><$}mo{$>-<$}/mo{$><$}mn{$>$}0.62{$<$}/mn{$><$}mo{$>$}\,{$<$}/mo{$><$}mtext{$>$}eV{$<$}/mtext{$><$}/mrow{$><$}/math{$>$} with a moderate donor-like capture asymmetry (k=1.7-2.6)\,k=1.7-2.6)\,{$<$}math display="inline" overflow="scroll" altimg="eq-00002.gif"{$><$}mrow{$><$}mi{$>$}k{$<$}/mi{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}1.7{$<$}/mn{$><$}mo{$>-<$}/mo{$><$}mn{$>$}2.6{$<$}/mn{$><$}mo stretchy="false"{$>$}){$<$}/mo{$><$}mo{$>$}\,{$<$}/mo{$><$}/mrow{$><$}/math{$>$} and an additional shallow energy state located at Ec-Et=0.1-0.2\,eVEc-Et=0.1-0.2\,eV{$<$}math display="inline" overflow="scroll" altimg="eq-00003.gif"{$><$}mrow{$><$}msub{$><$}mrow{$><$}mi{$>$}E{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi{$>$}c{$<$}/mi{$><$}/mrow{$><$}/msub{$><$}mo{$>-<$}/mo{$><$}msub{$><$}mrow{$><$}mi{$>$}E{$<$}/mi{$><$}/mrow{$><$}mrow{$><$}mi{$>$}t{$<$}/mi{$><$}/mrow{$><$}/msub{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}0.1{$<$}/mn{$><$}mo{$>-<$}/mo{$><$}mn{$>$}0.2{$<$}/mn{$><$}mo{$>$}\,{$<$}/mo{$><$}mtext{$>$}eV{$<$}/mtext{$><$}/mrow{$><$}/math{$>$}, which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare these results with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.},
  file = {/home/arch/Zotero/storage/Z588CMKG/Inglese et al. - 2016 - Recombination activity of light-activated copper d.pdf;/home/arch/Zotero/storage/YELN7EUQ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {copper,defects in semiconductors,InDatabase,LS-IT,silicon},
  number = {12}
}

@article{irmscher1984,
  title = {Hydrogen-Related Deep Levels in Proton-Bombarded Silicon},
  author = {Irmscher, K. and Klose, H. and Maass, K.},
  year = {1984},
  volume = {17},
  pages = {6317--6329},
  issn = {0022-3719},
  doi = {10.1088/0022-3719/17/35/007},
  file = {/home/arch/Zotero/storage/NGLNXAVB/1984_Hydrogen-related_deep_levels.pdf},
  journal = {Journal of Physics C: Solid State Physics},
  keywords = {defects in semiconductors,hydrogen,interstitial hydrogen,silicon},
  language = {en},
  number = {35}
}

@article{istratov1999,
  title = {Iron and Its Complexes in Silicon},
  author = {Istratov, A. A. and Hieslmair, H. and Weber, E. R.},
  year = {1999},
  volume = {69},
  pages = {13--44},
  issn = {0947-8396},
  doi = {10.1007/s003390050968},
  abstract = {This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive summary of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow accepters (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow accepters, the dissociation of these pairs, and the metastability of iron-acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined.},
  file = {/home/arch/Zotero/storage/HQZQL2D3/1999Iron_and_its_complexes_in.pdf},
  journal = {Applied Physics A: Materials Science and Processing},
  number = {1}
}

@article{jaraiz1986,
  title = {Electron Thermal Emission Rates of Nickel Centers in Silicon},
  author = {Jaraiz, M. and Due{\~n}as, S. and Vicente, J. and Bail{\'o}n, L. and Barbolla, J.},
  year = {1986},
  volume = {29},
  pages = {883--884},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(86)90008-0},
  abstract = {The majority carrier thermal emission rates of nickel levels in the depletion region of reverse biased silicon p+ nn+ junctions have been investigated using the admittance spectroscopy technique. We have found two levels associated with nickel in n-type silicon. The ``thermal activation energies'' have values of EC - 360 {$\pm$} 10 meV and EC - 570 {$\pm$} 10 meV.},
  file = {/home/arch/Zotero/storage/QSWIZ9EF/1986_Electron_thermal_emission.pdf;/home/arch/Zotero/storage/JIENRP8S/0038110186900080.html},
  journal = {Solid-State Electronics},
  keywords = {Admittance spectroscopy,defects in semiconductors,InDatabase,nickel,silicon},
  number = {9}
}

@article{jellison1982,
  title = {Transient Capacitance Studies of an Electron Trap at {{Ec}}-{{ET}} = 0.105 {{eV}} in Phosphorus-doped Silicon},
  author = {Jellison, G. E.},
  year = {1982},
  volume = {53},
  pages = {5715--5719},
  issn = {0021-8979},
  doi = {10.1063/1.331459},
  file = {/home/arch/Zotero/storage/BQK8GTSQ/1982_Transient_capacitance_studies.pdf;/home/arch/Zotero/storage/HQUQGRXL/1.html},
  journal = {Journal of Applied Physics},
  keywords = {carbon-carbon defect,defects in silicon,DLTS,EPR,InDatabase},
  number = {8}
}

@article{kimerling1976,
  title = {New {{Developments}} in {{Defect Studies}} in {{Semiconductors}}},
  author = {Kimerling, L. C.},
  year = {1976},
  volume = {23},
  pages = {1497--1505},
  issn = {0018-9499},
  doi = {10.1109/TNS.1976.4328529},
  abstract = {Not Available},
  file = {/home/arch/Zotero/storage/3KHXJR7I/1976_New_Developments_in_Defect.pdf;/home/arch/Zotero/storage/7SUNJXW7/4328529.html},
  journal = {IEEE Transactions on Nuclear Science},
  keywords = {Capacitance,Instruments,Scanning electron microscopy,Schottky barriers,Signal processing,Solids,Spectroscopy,Temperature dependence,ToGoInDatabase,Transient analysis,Working environment noise},
  number = {6}
}

@article{kimerling1981,
  title = {Oxygen-related Donor States in Silicon},
  author = {Kimerling, L. C. and Benton, J. L.},
  year = {1981},
  volume = {39},
  pages = {410--412},
  issn = {0003-6951},
  doi = {10.1063/1.92755},
  file = {/home/arch/Zotero/storage/Z2SFS4PJ/1981_Oxygen‐related_donor_states.pdf;/home/arch/Zotero/storage/38F6UYLI/1.html},
  journal = {Applied Physics Letters},
  keywords = {thermal donor,ToGoInDatabase},
  number = {5}
}

@article{kimerling1985,
  title = {Defect {{Structure}} and {{Properties}} by {{Junction Spectroscopy}}},
  author = {Kimerling, L. C. and Benton, J. L. and Lee, K. M. and Stavola, M.},
  year = {1985/ed},
  volume = {46},
  issn = {1946-4274, 0272-9172},
  doi = {10.1557/PROC-46-1},
  abstract = {The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed. An array of perturbation techniques are described which allow direct determination of electronic and atomic structure, as well as electrical and physical properties. The methods are illustrated with silicon materials studies of the divacancy using Polarized Excitation Photocapacitance, the oxygen donor using Stress and Electric Field Modulated DLTS, dislocations using spatially resolved DLTS, and iron impurities employing Charge State Control of Structure.},
  file = {/home/arch/Zotero/storage/AVLYLGDX/1985_Defect_Structure_and.pdf;/home/arch/Zotero/storage/GQ7GPWEV/9A1A22C2FE539A346701561C0AB835C4.html},
  journal = {MRS Online Proceedings Library Archive},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  language = {en}
}

@article{kunio1983,
  title = {Defect Levels in Chromium-Doped Silicon},
  author = {Kunio, Takemitsu and Yamazaki, Tatsuya and Ohta, Eiji and Sakata, Makoto},
  year = {1983},
  volume = {26},
  pages = {155--160},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(83)90117-X},
  abstract = {The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150\textdegree{}C for 0.5 and 3 hr. Five different levels at Ec-0.11 eV, Ec-0.21 eV, Ec-0.28 eV, Ec-0.36 eV and Ec-0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at Ec-0.20 eV (donor) and Ec-0.43 eV (acceptor). A donor level was also observed at Ev + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were {$\sigma$}n = 4.1 \texttimes{} 10-15 cm2 for the upper donor at Ec-0.20 eV, {$\sigma$}n = 2.0 \texttimes{} 10-16 cm2 for the acceptor at Ec -0.43 eV and {$\sigma$}p = 9.1 \texttimes{} 10-18 cm2 for the lower donor at Ev + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.},
  file = {/home/arch/Zotero/storage/2UG2ZKQW/1983Defect_levels_in.pdf;/home/arch/Zotero/storage/VD9KZWHW/003811018390117X.html},
  journal = {Solid-State Electronics},
  keywords = {chromium,DLTS,InDatabase,silicon},
  number = {2}
}

@article{kveder1982,
  title = {On the {{Energy Spectrum}} of {{Dislocations}} in {{Silicon}}},
  author = {Kveder, V. V. and Osipyan, Yu A. and Schr{\"o}ter, W. and Zoth, G.},
  year = {1982},
  volume = {72},
  pages = {701--713},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210720233},
  abstract = {Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized states strongly change with deformation temperature and during anneal around 0.6 Tm (Tm melting temperature). While part of this effect can be certainly explained by anneal out of point defects, there must be a structural change in the core region of the dislocation, since the dislocation density remains unchanged during anneal.},
  copyright = {Copyright \textcopyright{} 1982 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/NV5PHSPA/1982On_the_Energy_Spectrum_of_Dislocations.pdf;/home/arch/Zotero/storage/KAJ35EEZ/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {disslocations,DLTS,EPR,InDatabase},
  language = {en},
  number = {2}
}

@article{lang1980,
  title = {Complex Nature of Gold-Related Deep Levels in Silicon},
  author = {Lang, D. V. and Grimmeiss, H. G. and Meijer, E. and Jaros, M.},
  year = {1980},
  volume = {22},
  pages = {3917--3934},
  doi = {10.1103/PhysRevB.22.3917},
  abstract = {We report detailed measurements of the thermal and optical properties of the well-known gold-acceptor level in silicon. From a comparison of these properties measured in two types of silicon p+n diodes (one fabricated from epitaxially grown silicon and the other from silicon grown by the Czochrolski technique), we find that there are at least two (and perhaps more) different types of gold-acceptor centers in silicon. Measurements of the ratio of the deep-level transient spectroscopy signal due to the gold-donor level to that of the gold acceptor in the same sample show that these two levels are not related to the same gold center, as had previously been believed. A comparison with data in the literature for five other approximately midgap levels in silicon (Ag, Co, Rh, S, and process-induced levels) shows that the electron thermal-emission rates of these are all identical to that of the gold acceptor within experimental error. This suggests that these deep levels have the same underlying defect structure. Comparisons of our measured electron-capture cross sections with those reported in the literature for the gold acceptor show a heretofore unreported correlation between the magnitude of this cross section and the ratio of gold concentration to that of the shallow donor impurity. This suggests that ion pairing between gold acceptors and shallow donors plays a role in determining the capture cross section of the defect. We also have measured for the first time the capture cross sections associated with the gold-donor defect in n-type material and find results significantly different from those reported in the literature for p-type silicon. The optical cross sections of the gold acceptor show nearly a factor of 10 difference in magnitude and subtle differences in shape between epitaxial and Czochrolski samples. It is therefore possible that oxygen is also playing a role in the gold-based defect complexes. Attempts to obtain the temperature dependence of the gold-acceptor level from thermal capture and emission data proved inconclusive and led to various paradoxes which we discuss. Finally, we discuss possible models for gold-related defect complexes which are consistent with our results and might form the basis for future work.},
  file = {/home/arch/Zotero/storage/WB9MYD97/1980_Complex_nature_of.pdf;/home/arch/Zotero/storage/U3HP43J4/PhysRevB.22.html},
  journal = {Physical Review B},
  number = {8}
}

@article{lemke1981,
  title = {{Dotierungseigenschaften von Eisen in Silizium}},
  author = {Lemke, H.},
  year = {1981},
  volume = {64},
  pages = {215--224},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210640123},
  abstract = {Die Energieniveaus und Wirkungsquerschnitte von Eisen in Silizium werden mit den DLTS-und TSCa-Methoden untersucht. Das Donatorniveau bei Ev + 0,39 eV mit einem Einfangkoeffizienten von r {$\approx$} 2 \texttimes{} 10-9 cm3 s-1 (T = 300 K) mu{\ss} dem ,,freien''︁ Fe-Ion zugeordnet werden. Die beobachteten {\AA}nderungen der Leitf{\"a}higkeit und Lebensdauer bei p-Silizium werden durch eine Paarung der Fe+-Ionen mit den Akzeptoren verursacht. Mit Hilfe der Zeitkonstanten und der Gleichgewichtskonstanten wird die Aktivierungsenergie der Reaktion zu 0,80 eV und die Bindungsenergie zu 0,65 eV bestimmt. Gegen{\"u}ber fr{\"u}heren Messungen wird kein Donatorniveau bei Ee \textendash{} 0,55 eV beobachtet. Das Energieniveau der (Fe+B-)-Paare ist ein Akzeptor bei Ee \textendash{} 0,23 eV mit gro{\ss}en Einfangkoeffizienten r {$\approx$} 10-8 cm3 s-1 und r = 3 \texttimes{} 10-8 cm3 s-1 (T = 90 K). Die w{\"a}hrend der Paarung beobachteten {\AA}nderungen der Gro{\ss}signal-Lebensdauer werden durch diesen Akzeptor verursacht.},
  copyright = {Copyright \textcopyright{} 1981 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/TY6GQ8S8/1981_Dotierungseigenschaften_von.pdf;/home/arch/Zotero/storage/LJBTFM9Z/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {iron,ToGoInDatabase},
  language = {de},
  number = {1}
}

@article{lemke1981a,
  title = {{Eigensehaften der Dotierungsniveaus von Mangan und Vanadium in Silizium}},
  author = {Lemke, H.},
  year = {1981},
  volume = {64},
  pages = {549--556},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210640219},
  abstract = {Die Energieniveaus und Wirkungsquerschnitte der {\"U}bergangsmetalle Mangan und Vanadium werden mit den Methoden DLTS und TSCa untersucht. Die zweiten Ionisationsstufen Mn++, V++ werden als Donatorniveaus in der unteren H{\"a}lfte der verbotenen Zone bei Ev + 0,27 eV (Mn) und Ev + 0,31 eV (V) nachgewiesen. Die Einfangkoeffizienten f{\"u}r L{\"o}cher der repulsiven Zentren sind klein ({$\approx$} 10-12 cm3 s-l (Mn), {$\approx$} 103 s-1 (V) bei T = 90 K) und zeigen eine starke Temperaturabh{\"a}ngigkeit (etwa zwei Gr{\"o}{\ss}enordnungen f{\"u}r 90 {$<$} T {$<$} 300 K). F{\"u}r die ersten Ionisationsstufen werden Energieniveaus bei Ec\textendash{}0,42 eV (Mn) und Ec\textendash{}0,43 eV (V) und Einfangkoeffizienten von etwa 10-9 cm3 s-1 (T = 90 K) ermittelt. In p-Kristallen wird eine Paarung zwischen Mangan und Bor beobachtet. Das Energieniveau der Paare (Mn++B-) ist ein Donator bei etwa Ec\textendash{}0,55 eV mit einem sehr kleinen L{\"o}chereinfangkoeffizienten r {$\approx$} cm3 s-1 (T = = 90 K). In Vanadium-dotiertem Silizium wird ein Akzeptorniveau bei Ec \textendash{} 0,18 eV mit r = 2 \texttimes{} 10-9 cm3 s-1 (T = 90 K) nachgewiesen. Dieses Niveau wird m{\"o}glicherweise durch substi-tuiertes Vanadium verursacht.},
  copyright = {Copyright \textcopyright{} 1981 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/JHWZKTST/1981Eigensehaften_der_Dotierungsniveaus_von.pdf;/home/arch/Zotero/storage/HZYSLZYU/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {manganese,ToGoInDatabase,vanadium},
  language = {de},
  number = {2}
}

@article{lemke1983,
  title = {{\"U}ber Die Chemische {{Natur}} von {{Rekombinationszentren}} in {{Si}}-{{Leistungsbauelementen}}},
  author = {Lemke, H.},
  year = {1983},
  volume = {76},
  pages = {K193-K196},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210760265},
  copyright = {Copyright \textcopyright{} 1983 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/NFJAGCQU/1983Uber_die_chemische_Natur_von.pdf;/home/arch/Zotero/storage/8TBJ6DH5/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {defects in semiconductors,InDatabase,molybdenum,silicon},
  language = {en},
  number = {2}
}

@article{lemke1986,
  title = {Dotierungseigenschaften von {{Silber}} in {{Silizium}}},
  author = {Lemke, H.},
  year = {1986},
  volume = {94},
  pages = {K55-K59},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210940171},
  copyright = {Copyright \textcopyright{} 1986 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/5EP3Q8CR/1986_Dotierungseigenschaften_von.pdf;/home/arch/Zotero/storage/N3BDIDHC/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {ToGoInDatabase},
  language = {en},
  number = {1}
}

@inproceedings{lemke1994,
  title = {The {{Behavior}} of Transition and Noble Metals in Silicon Crystals},
  booktitle = {Seventh {{International Symposium}} on {{Silicon Materials Science}} and {{Technology}}},
  author = {Lemke, H.},
  year = {1994},
  pages = {695--710},
  publisher = {{Electrochemical Society}},
  address = {{San Francisco}},
  isbn = {978-1-56677-042-2},
  language = {en}
}

@article{lisiak1976,
  title = {Rhodium and Iridium as Deep Impurities in Silicon},
  author = {Lisiak, K. P. and Milnes, A. G.},
  year = {1976},
  volume = {19},
  pages = {115--119},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(76)90087-3},
  abstract = {Rh is found to have two levels\textemdash{}an acceptor at Ec -0{$\cdot$}353 eV and a donor at Ec -0{$\cdot$}591 eV. These are present in equal concentrations but may not correspond to the same site. The hole lifetime for n-type Si diffused with Rh at 1100\textdegree{} is found to be 4{$\cdot$}8 \texttimes{} 10-9 sec. For diffused and quenched Si, Ir produces two levels, a donor at Ec -0{$\cdot$}385 eV (with an unusually large electron capture cross section 10-10 cm2) and an acceptor at Ec -0{$\cdot$}629 eV. These two levels are inferred to be on different atomic sites. The lifetime for n-Si diffused with Ir at 1100\textdegree{}C is found to be 8{$\cdot$}8 \texttimes{} -10-9 sec.},
  file = {/home/arch/Zotero/storage/VUNRXC54/1976_Rhodium_and_iridium_as_deep.pdf;/home/arch/Zotero/storage/RBTDC6IZ/0038110176900873.html},
  journal = {Solid-State Electronics},
  keywords = {defects in semiconductors,iridium,rhodium,silicon,ToGoInDatabase},
  number = {2}
}

@article{macdonald2001,
  title = {Capture Cross Sections of the Acceptor Level of Iron\textendash{}Boron Pairs in p-Type Silicon by Injection-Level Dependent Lifetime Measurements},
  author = {Macdonald, Daniel and Cuevas, Andr{\'e}s and {Wong-Leung}, Jennifer},
  year = {2001},
  volume = {89},
  pages = {7932--7939},
  issn = {0021-8979},
  doi = {10.1063/1.1372156},
  file = {/home/arch/Zotero/storage/BRWD8MVF/2001_Capture_cross_sections_of_the.pdf;/home/arch/Zotero/storage/98B3YSEZ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects,iron boron},
  number = {12}
}

@inproceedings{macdonald2003,
  title = {Temperature-and Injection-Dependent Lifetime Spectroscopy of Copper-Related Defects in Silicon},
  booktitle = {Photovoltaic {{Energy Conversion}}, 2003. {{Proceedings}} of 3rd {{World Conference}} On},
  author = {Macdonald, D. and Cuevas, Andres and Rein, S. and Lichtner, P. and Glunz, S. W.},
  year = {2003},
  volume = {1},
  pages = {87--90},
  publisher = {{IEEE}},
  file = {/home/arch/Zotero/storage/R3ZQRS34/2003Temperature-and_injection-dependent.pdf},
  isbn = {4-9901816-0-3},
  keywords = {copper,defects in semiconductors,LS-I,silicon}
}

@article{macdonald2006,
  title = {Doping Dependence of the Carrier Lifetime Crossover Point upon Dissociation of Iron-Boron Pairs in Crystalline Silicon},
  author = {MacDonald, Daniel and Roth, T. and Deenapanray, P. N. K. and Trupke, T. and Bardos, R. A.},
  year = {2006},
  volume = {89},
  pages = {0--3},
  issn = {0003-6951},
  doi = {10.1063/1.2358126},
  abstract = {The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the boron dopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In addition, photoluminescence-based measurements were found to offer some distinct advantages over traditional photoconductance-based techniques in determining recombination parameters from low-injection carrier lifetimes. \{\textbackslash{}copyright\}2006 American Institute of Physics},
  file = {/home/arch/Zotero/storage/CCTJZDHA/MacDonald et al. - 2006 - Doping dependence of the carrier lifetime crossove.pdf;/home/arch/Zotero/storage/NDTRZYB7/Macdonald et al. - 2006 - Doping dependence of the carrier lifetime crossove.pdf},
  journal = {Applied Physics Letters},
  number = {14}
}

@article{macdonald2008,
  title = {Imaging Interstitial Iron Concentrations in Boron-Doped Crystalline Silicon Using Photoluminescence},
  author = {Macdonald, D. and Tan, J. and Trupke, T.},
  year = {2008},
  volume = {103},
  pages = {073710},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.2903895},
  file = {/home/arch/Zotero/storage/VAFN7N7X/2008_Imaging_interstitial_iron.pdf},
  journal = {Journal of Applied Physics},
  language = {en},
  number = {7}
}

@article{makarenko2007,
  title = {Reactions of Interstitial Carbon with Impurities in Silicon Particle Detectors},
  author = {Makarenko, L. F. and Moll, M. and Korshunov, F. P. and Lastovski, S. B.},
  year = {2007},
  volume = {101},
  pages = {113537},
  issn = {0021-8979},
  doi = {10.1063/1.2745328},
  file = {/home/arch/Zotero/storage/3V8N8XBH/2007_Reactions_of_interstitial.pdf;/home/arch/Zotero/storage/H6ZCNZAQ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {carbon,defects in semiconductors,silicon,ToGoInDatabase},
  number = {11}
}

@article{marchand1977,
  title = {Study of Thermally Induced Deep Levels in {{Al}} Doped {{Si}}},
  author = {Marchand, Raymond L. and Sah, Chih-Tang},
  year = {1977},
  volume = {48},
  pages = {336--341},
  issn = {0021-8979},
  doi = {10.1063/1.323383},
  file = {/home/arch/Zotero/storage/VILMWMVK/1977_Study_of_thermally_induced.pdf;/home/arch/Zotero/storage/YNWGQW9R/1.html},
  journal = {Journal of Applied Physics},
  keywords = {Al,defects in semiconductors,DLTS,InDatabase,Si},
  number = {1}
}

@article{markevich2018,
  title = {Electron Emission and Capture by Oxygen-Related Bistable Thermal Double Donors in Silicon Studied with Junction Capacitance Techniques},
  author = {Markevich, V. P. and {Vaqueiro-Contreras}, M. and Lastovskii, S. B. and Murin, L. I. and Halsall, M. P. and Peaker, A. R.},
  year = {2018},
  volume = {124},
  pages = {225703},
  issn = {0021-8979},
  doi = {10.1063/1.5053805},
  file = {/home/arch/Zotero/storage/DQ4XQFHE/2018_Electron_emission_and_capture.pdf;/home/arch/Zotero/storage/HXYNKSWE/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,thermal donors,ToGoInDatabase},
  number = {22}
}

@article{mathiot1989,
  title = {Titanium-related Deep Levels in Silicon: {{A}} Reexamination},
  shorttitle = {Titanium-related Deep Levels in Silicon},
  author = {Mathiot, D. and Hocine, S.},
  year = {1989},
  volume = {66},
  pages = {5862--5867},
  issn = {0021-8979},
  doi = {10.1063/1.343608},
  file = {/home/arch/Zotero/storage/YHEW5K6T/1989_Titanium‐related_deep_levels.pdf;/home/arch/Zotero/storage/PYKZXYNQ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,silicon,titanium},
  number = {12}
}

@article{mchedlidze2015,
  title = {Direct Detection of Carrier Traps in {{Si}} Solar Cells after Light-Induced Degradation},
  author = {Mchedlidze, Teimuraz and Weber, J{\"o}rg},
  year = {2015},
  volume = {9},
  pages = {108--110},
  issn = {1862-6270},
  doi = {10.1002/pssr.201409474},
  abstract = {In solar cells fabricated from boron-doped Cz-Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so-called ``light-induced degradation'' (LID). The DLTS signals were detected from mesa-diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at EV + 0.37 eV and EC \textendash{} 0.41 eV and apparent carrier capture cross-sections in the 10\textendash{}17\textendash{}10\textendash{}18 cm2 range. The concentration of the traps was in the range of 1012\textendash{}1013 cm\textendash{}3. The traps were eliminated by annealing of the mesa-diodes at 200 \textdegree{}C. No traps were detected in Ga-doped solar cells after the LID procedure or below the light protected bus bar locations in B-doped cells. (\textcopyright{} 2015 WILEY-VCH Verlag GmbH \&Co. KGaA, Weinheim)},
  copyright = {\textcopyright{} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  file = {/home/arch/Zotero/storage/JV7RXW26/2015Direct_detection_of_carrier_traps_in_Si.pdf;/home/arch/Zotero/storage/M7KDQD3W/2015Direct_detection_of_carrier_traps_in_Si.pdf;/home/arch/Zotero/storage/QXRHCXP8/pssr.html},
  journal = {physica status solidi (RRL) \textendash{} Rapid Research Letters},
  keywords = {carrier traps,defects in silicon,DLTS,light-induced degradation,ToGoInDatabase},
  language = {en},
  number = {2}
}

@book{milnes1973,
  title = {Deep {{Impurities}} in {{Semiconductors}}},
  author = {{A.G. Milnes}},
  year = {1973},
  publisher = {{Wiley}},
  isbn = {978-0-471-60670-3},
  keywords = {Condensed Matter,defects in semiconductors,InDatabase,review,siliver},
  lccn = {73005844},
  series = {A {{Wiley}}-{{Interscience}} Publication}
}

@article{mishra1996,
  title = {Identification of {{Cr}} in P-type Silicon Using the Minority Carrier Lifetime Measurement by the Surface Photovoltage Method},
  author = {Mishra, Kamal},
  year = {1996},
  volume = {68},
  pages = {3281--3283},
  issn = {0003-6951},
  doi = {10.1063/1.116574},
  file = {/home/arch/Zotero/storage/HQ7D9SUJ/1996_Identification_of_Cr_in.pdf;/home/arch/Zotero/storage/NM2YVT7X/1.html},
  journal = {Applied Physics Letters},
  keywords = {chromium,chromium boron,defects in semiconductors,silicon},
  number = {23}
}

@article{miyata1976,
  title = {Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon},
  author = {Miyata, Kenji and Sah, C. T.},
  year = {1976},
  volume = {19},
  pages = {611--613},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(76)90059-9},
  abstract = {The thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are 232 and 472 meV for the two donor levels below the conduction band edge and the pre-exponential factors, A, are both 1.5 \texttimes{} 1010 sec-1 in the Ahrrenius equation for the emission rate, A (T300)2exp ({$>$} -{$\Delta$}EkBT).},
  file = {/home/arch/Zotero/storage/VW5H3XZB/1976_Thermal_emission_rates_and.pdf;/home/arch/Zotero/storage/I5CS4HNQ/0038110176900599.html},
  journal = {Solid-State Electronics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {7}
}

@article{mukashev1982,
  title = {Studies of Radiation Defects in Hydrogen Implanted Silicon by Deep Level Transient Spectroscopy},
  author = {Mukashev, B. N. and Fukuoka, N. and Saito, H.},
  year = {1982},
  volume = {61},
  pages = {159--163},
  issn = {0033-7579},
  doi = {10.1080/00337578208229928},
  abstract = {Defect levels produced in p-type silicon by 30 MeV ion implantation and their isochronal annealing behavior were studied by DLTS. Three hole traps located at Ev + 0.18 eV, Ev + 0.28 eV and Ev + 0.33 eV were introduced at the track end of ions. From comparison with other published data we attribute these levels to single positively charged divacancy (Ev + 0.18 eV), to Si-B3 (\langle{}100\rangle{} split-interstitial Ev + 0.28 eV), and to Si-A14 (divacancy-oxygen complex Ev + 0.33 eV). It was found that the introduction rate of observed defects shows a peak at the fluence of 5 \texttimes{} 1013 implanted ions and then decreases at higher fluence.},
  file = {/home/arch/Zotero/storage/JCZS6MU8/1982_Studies_of_radiation_defects.pdf;/home/arch/Zotero/storage/YLCCDQPR/00337578208229928.html},
  journal = {Radiation Effects},
  keywords = {defects in semiconductors,divacancy,DLTS,InDatabase,vacancy,vacancy oxygen},
  number = {3-4}
}

@article{muller1974,
  title = {Thermally Stimulated Current Measurements on Silicon Junctions Produced by Implantation of Low Energy Boron Ions},
  author = {Muller, J. C. and Stuck, R. and Berger, R. and Siffert, P.},
  year = {1974},
  volume = {17},
  pages = {1293--1297},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(74)90007-0},
  abstract = {Thermally stimulated current (TSC) measurements have been performed directly on junctions realized by implantation of low energy (15 keV) boron ions into N-type silicon after annealing treatments at different temperatures between 180 and 500\textdegree{}C. The TSC curves have been analysed by a new method based on the measurement of the mean time before re-emission of the trapped carriers and compared with that of Grossweiner. Both methods indicate that the dominant level is a hole trap located at {$>$}Ev + 0{$\cdot$}25 eV. This defect anneals at 260\textdegree{}C and is believed to be correlated with the vacancy-vacancy association.},
  file = {/home/arch/Zotero/storage/NZCQFMKL/1974_Thermally_stimulated_current.pdf;/home/arch/Zotero/storage/4M6ADQTZ/0038110174900070.html},
  journal = {Solid-State Electronics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {12}
}

@article{mullins2018,
  title = {Thermally Activated Defects in Float Zone Silicon: {{Effect}} of Nitrogen on the Introduction of Deep Level States},
  shorttitle = {Thermally Activated Defects in Float Zone Silicon},
  author = {Mullins, Jack and Markevich, Vladimir P. and {Vaqueiro-Contreras}, Michelle and Grant, Nicholas E. and Jensen, Leif and Jab{\l}o{\'n}ski, Jaros{\l}aw and Murphy, John D. and Halsall, Matthew P. and Peaker, Anthony R.},
  year = {2018},
  volume = {124},
  pages = {035701},
  issn = {0021-8979},
  doi = {10.1063/1.5036718},
  abstract = {Float zone silicon (FZ-Si) is typically assumed to be an extremely high quality material, with high minority carrier lifetimes and low concentrations of recombination active defects. However, minority carrier lifetime in FZ-Si has previously been shown to be unstable following thermal treatments between 450 and 700\,\textdegree{}C, with a range of unidentified deep level states being linked to reduced carrier lifetime. There are suspicions that nitrogen doping, which occurs from the growth atmosphere, and intrinsic point defects play a role in the degradation. This study aims to address this by using deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy, Laplace DLTS, and photoluminescence lifetime measurements to study recombination active defects in nitrogen-doped and nitrogen-lean n-type FZ-Si samples. We find that nitrogen-doped samples experience increased degradation due to higher concentrations of deep level defects during thermal treatments compared to nitrogen-lean samples. In an attempt to explain this difference, in-diffusion of nickel has been used as a marker to demonstrate the existence of higher vacancy concentrations in the nitrogen-doped samples. The origin of the recombination active defects responsible for the thermally induced lifetime degradation in FZ-Si crystals is discussed.},
  file = {/home/arch/Zotero/storage/VHSYCFNU/2018_Thermally_activated_defects.pdf;/home/arch/Zotero/storage/YISA5HMZ/1.html},
  journal = {Journal of Applied Physics},
  keywords = {float zone,grown in defect,silicon},
  number = {3}
}

@article{murphy2006,
  title = {Nitrogen-{{Doped Silicon}}: {{Mechanical}}, {{Transport}} and {{Electrical Properties}}},
  shorttitle = {Nitrogen-{{Doped Silicon}}},
  author = {Murphy, John D. and Alpass, Charles R. and Giannattasio, Armando and Senkader, Semih and Emiroglu, Deniz and {Evans-Freeman}, Jan H. and Falster, R. J. and Wilshaw, Peter R.},
  year = {2006},
  volume = {3},
  pages = {239--253},
  issn = {1938-6737, 1938-5862},
  doi = {10.1149/1.2355760},
  file = {/home/arch/Zotero/storage/KXIFAVX6/2006_Nitrogen-Doped_Silicon.pdf;/home/arch/Zotero/storage/F9QNPRWK/239.full.html},
  journal = {ECS Transactions},
  keywords = {defects in semiconductors,DLTS,nitrogen,silicon},
  language = {en},
  number = {4}
}

@article{naerland2017,
  title = {On the Recombination Centers of Iron-Gallium Pairs in {{Ga}}-Doped Silicon},
  author = {N{\ae}rland, Tine Uberg and Bernardini, Simone and Haug, Halvard and Grini, Sigbj{\o}rn and Vines, Lasse and Stoddard, Nathan and Bertoni, Mariana},
  year = {2017},
  volume = {122},
  pages = {085703},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.5000358},
  file = {/home/arch/Zotero/storage/3HSEFXBV/Nærland et al. - 2017 - On the recombination centers of iron-gallium pairs.pdf;/home/arch/Zotero/storage/99JYRCQ6/2017On_the_recombination_centers_of.pdf;/home/arch/Zotero/storage/VU8AGCKN/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in silicon,FeGa,InDatabase},
  language = {en},
  number = {8}
}

@article{nagasawa1975,
  title = {Fast Transient Capacitance Measurements for Implanted Deep Levels in Silicon},
  author = {Nagasawa, K. and Schulz, M.},
  year = {1975},
  volume = {8},
  pages = {35--42},
  issn = {1432-0630},
  doi = {10.1007/BF00883667},
  abstract = {A fast transient capacitance measurement technique on Schottky barrier contacts is reported, which makes possible the determination of energy levels and capture cross-sections of impurities in silicon. The emission time constant {$\tau$}e and the capture time constant {$\tau$}c are measured by making use of the sharply peaked impurity distribution obtained by ion implantation. Two techniques are employed:1) the temperature variation of the emission time constant {$\tau$}e is measured assuming a temperature-independent capture cross-section and 2) the ratio {$\tau$}e/{$\tau$}c is determined at a fixed temperature. Capture cross-sections for Be ({$\sigma$}p = 4.20 \texttimes{}10-15 cm2) and Ir ({$\sigma$}n = 7.28 \texttimes{} 10-16 cm2) are reported for the first time. The value for the gold acceptor level ({$\sigma$}n = 2.18 \texttimes{} 10-15 cm2) agrees with values known from the literature. The capture cross-sections for the gold donor level ({$\sigma$}p = 1.04 \texttimes{} 10-18 cm2) and an additional level near the conduction band are probably affected by radiation damage.},
  file = {/home/arch/Zotero/storage/QHTNBS4T/1975_Fast_transient_capacitance.pdf},
  journal = {Applied physics},
  keywords = {defects in semiconductors,DLTS,Free Carrier Concentration,InDatabase,silicon},
  language = {en},
  number = {1}
}

@inproceedings{nakashima1994,
  title = {Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon},
  booktitle = {Defects in {{Semiconductors}} 17},
  author = {Nakashima, H. and Sadoh, T. and Kitagawa, H. and Hashimoto, K.},
  year = {1994},
  volume = {143-4},
  pages = {761--766},
  publisher = {{Materials Science Forum}},
  doi = {10.4028/www.scientific.net/MSF.143-147.761},
  file = {/home/arch/Zotero/storage/GPXFYG9J/1994Diffusion_and_electrical_properties_of.pdf;/home/arch/Zotero/storage/ZJE8CA4M/diffusion-and-electrical-properties-of-3d-transition-metal-impuri.html},
  keywords = {defects in semiconductors,DLTS,InDatabase,titanium},
  language = {English}
}

@article{nauka1985,
  title = {Nitrogen-related Deep Electron Traps in Float Zone Silicon},
  author = {Nauka, K. and Goorsky, M. S. and Gatos, H. C. and Lagowski, J.},
  year = {1985},
  volume = {47},
  pages = {1341--1343},
  issn = {0003-6951},
  doi = {10.1063/1.96274},
  file = {/home/arch/Zotero/storage/TC8BL9DD/1985_Nitrogen‐related_deep.pdf;/home/arch/Zotero/storage/S3TTV6V6/1.html},
  journal = {Applied Physics Letters},
  keywords = {defects in semiconductors,DLTS,nitrogen,silicon},
  number = {12}
}

@article{newman1954,
  title = {Photoconductivity in {{Gold}}-{{Doped Silicon}}},
  author = {Newman, R.},
  year = {1954},
  volume = {94},
  pages = {1530--1531},
  doi = {10.1103/PhysRev.94.1530},
  abstract = {Photoconductivity has been studied in p- type gold-doped silicon at 20\textdegree{}K, 77\textdegree{}K, and 195\textdegree{}K. The impurity photoconduction shows a temperature dependence. At 20\textdegree{}K and 77\textdegree{}K, the data indicate a simple photoconductive process with a threshold at about 0.33 ev. At 195\textdegree{}K, the data indicate a complex photoconductive spectrum.},
  file = {/home/arch/Zotero/storage/KEIKP87W/1954_Photoconductivity_in.pdf},
  journal = {Physical Review},
  number = {6}
}

@article{nielsen1999,
  title = {Deep Levels of Vacancy-Hydrogen Centers in Silicon Studied by {{Laplace DLTS}}},
  author = {Nielsen, K Bonde and Dobaczewski, L and Goscinski, K and Bendesen, R and Andersen, Ole and Bech Nielsen, B},
  year = {1999},
  volume = {273-274},
  pages = {167--170},
  issn = {0921-4526},
  doi = {10.1016/S0921-4526(99)00437-8},
  abstract = {We identify the acceptor levels (-/0) of the VH and V2H defects in silicon from comparison of DLTS and EPR annealing data. The levels are very close to each other and close to the acceptor level of the PV defect (the E-center) as well. In order to separate them, we have applied the high-resolution technique of Laplace DLTS and compared the formation and annealing properties of defects generated by implantation of hydrogen or helium. We further applied Laplace DLTS in combination with uniaxial stress to study the acceptor level at Ec-Et=0.31eV previously assigned to a vacancy-hydrogen\textendash{}oxygen defect. We find, in accordance with recent EPR measurements, that the defect displays orthorhombic-I symmetry and rule out that it contains two hydrogen atoms. The defect can be understood as a single hydrogen atom bound inside the A-center, the well-known VO defect of silicon, and we denote it VOH accordingly. The observed orthorhombic-I symmetry arises because the hydrogen atom (at T=160K) swiftly jumps among two equivalent sites across the (110) plane that contains the Si\textendash{}O\textendash{}Si bond. Previous studies have shown that hydrogenation of oxygen-rich electron-irradiated samples leads to the formation of VOH with simultaneous depletion of the A-center. Our structural data are in accordance with this dynamic behavior.},
  file = {/home/arch/Zotero/storage/DIXW8JQ2/1999_Deep_levels_of.pdf;/home/arch/Zotero/storage/BC6YUZMN/S0921452699004378.html},
  journal = {Physica B: Condensed Matter},
  keywords = {DLTS,DLTS-L,hydrogen,Silicon,ToGoInDatabase,vacancies,vacancy hydrogen,vacancy oxygen}
}

@article{nielsen1999a,
  title = {Bond-Centered Hydrogen in Silicon Studied by in Situ Deep-Level Transient Spectroscopy},
  author = {Nielsen, K. B. and Nielsen, B. Bech and Hansen, J. and Andersen, E. and Andersen, J. U.},
  year = {1999},
  volume = {60},
  pages = {1716--1728},
  doi = {10.1103/PhysRevB.60.1716},
  abstract = {In situ deep level transient spectroscopy (DLTS) has been applied to investigate n-type silicon implanted with protons at low temperatures. Two DLTS signals, labeled E3{${'}$} and E3'', originate from hydrogen-related donor centers. The electron emission rates of the donors are similar and the two signals are discernible only because they form and anneal differently. In n-type silicon, the E3{${'}$} and E3'' centers transform into negatively charged centers at {$\sim$}100 K and at {$\lessequivlnt$}65 K, respectively. Both signals can be regenerated at 65 K: E3{${'}$} by forward-bias injection of holes and E3'' by illumination with band-gap light under reverse-bias conditions. During the E3{${'}$} regeneration long-range migration of hydrogen occurs, whereas E3'' regenerates without migration. In the space-charge layer of reverse biased diodes, E3{${'}$} converts into E3'' with an activation enthalpy of 0.44 eV in oxygen-rich material, whereas E3'' converts into E3{${'}$} with an activation enthalpy of 0.72 eV in oxygen-poor material. It is found that the density of hydrogen sites associated with E3'' approximately equals the oxygen concentration, whereas the density of E3{${'}$} sites is about 1023cm-3. These results provide further evidence for our previous assignment of E3{${'}$} to isolated hydrogen at a bond center site and leads to the assignment of E3'' to bond centered hydrogen perturbed by a nearby oxygen atom. We argue that dilated Si-Si bonds in the strain fields around impurities and defects are trapping sites for hydrogen.},
  file = {/home/arch/Zotero/storage/5U4N3367/1999_Bond-centered_hydrogen_in.pdf},
  journal = {Physical Review B},
  keywords = {hydrogen,ToGoInDatabase},
  number = {3}
}

@article{nielsen2002,
  title = {Acceptor State of Monoatomic Hydrogen in Silicon and the Role of Oxygen},
  author = {Nielsen, Bonde K. and Dobaczewski, L. and S{\o}g{\aa}rd, S. and Nielsen, B. Bech},
  year = {2002},
  volume = {65},
  pages = {075205},
  doi = {10.1103/PhysRevB.65.075205},
  abstract = {We determine the activation enthalpies for electron emission of two near T-site hydrogen centers in silicon to be {$\sim$}0.65 and {$\sim$}0.79 eV. The deeper center is oxygen related, and stabilized with a binding energy of {$\sim$}0.5 eV with respect to the shallower center. We verify the negative-U behavior of both centers, and demonstrate the crucial role that this behavior and the presence of oxygen have for the migration of hydrogen in silicon. The shallower center is interpreted as the acceptor of monatomic isolated hydrogen, and the deeper center is interpreted as a perturbed version of this acceptor.},
  file = {/home/arch/Zotero/storage/T9NHJ2K4/2002_Acceptor_state_of_monoatomic.pdf},
  journal = {Physical Review B},
  keywords = {ToGoInDatabase},
  number = {7}
}

@article{niewelt2016,
  title = {Fast In-Situ Photoluminescence Analysis for a Recombination Parameterization of the Fast {{BO}} Defect Component in Silicon},
  author = {Niewelt, T. and M{\"a}gdefessel, S. and Schubert, M. C.},
  year = {2016},
  volume = {120},
  pages = {085705},
  doi = {10.1063/1.4961423},
  file = {/home/arch/Zotero/storage/WP4NLYAI/2016_Fast_in-situ.pdf},
  journal = {Journal of Applied Physics},
  keywords = {boron-oxygen,defects in semiconductors,silicon,ToGoInDatabase},
  number = {8}
}

@article{pals1974,
  title = {Properties of {{Au}}, {{Pt}}, {{Pd}} and {{Rh}} Levels in Silicon Measured with a Constant Capacitance Technique},
  author = {Pals, J. A.},
  year = {1974},
  volume = {17},
  pages = {1139--1145},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(74)90157-9},
  abstract = {Measurements of emission rates and majority carrier capture cross-sections of Au, Pt, Pd and Rh centres in silicon are reported, and the activation energies associated with the different levels of these centres are determined. Where appropriate, our results are compared with values reported in the literature; other results have not been previously reported. The measurement depends on the emission and capture of majority carriers on the centres in the depletion layer of a p-n junction or Schottky barrier. The change in charge state of the centres is monitored by measuring the change in reverse bias applied to the junction necessary to keep the junction capacitance constant. The advantage of this technique, compared with the usual method of keeping the bias voltage constant and measuring the change in capacitance, is demonstrated.},
  file = {/home/arch/Zotero/storage/PCHDES95/1974Properties_of_Au,_Pt,_Pd_and_Rh_levels.pdf;/home/arch/Zotero/storage/HU72YFFB/0038110174901579.html},
  journal = {Solid-State Electronics},
  keywords = {gold,InDatabase,palladium,platinum,rhodium,ToGoInDatabase},
  number = {11}
}

@article{pandian1988,
  title = {Silver Related Deep Levels in Silicon},
  author = {Pandian, V. and Kumar, V.},
  year = {1988},
  volume = {109},
  pages = {273--278},
  issn = {1521-396X},
  doi = {10.1002/pssa.2211090129},
  abstract = {The properties of silver impurity levels in silicon are studied. Activation enthalpies of 0.56 eV from the conduction band for the acceptor level and 0.33 eV from the valence band for the donor level are determined using C(U) and DLTS. The directly measured thermal electron capture cross section of the acceptor level equals to {$\sigma$}n = 3.0 \texttimes{} 10-16 cm2 and the hole capture cross section of the donor level to {$\sigma$}p = 3.1 \texttimes{} 10-16 cm2. Both the cross sections are temperature independent in the measurement range. The entropy factors of the acceptor and donor levels are estimated to be about 15.},
  copyright = {Copyright \textcopyright{} 1988 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/XT4EDFQR/1988Silver_related_deep_levels_in_silicon.pdf;/home/arch/Zotero/storage/EKTVXTRW/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {ToGoInDatabase},
  language = {en},
  number = {1}
}

@inproceedings{paudyal2009,
  title = {Temperature Dependent Electron and Hole Capture Cross Sections of Iron-Contaminated Boron-Doped Silicon},
  booktitle = {2009 34th {{IEEE Photovoltaic Specialists Conference}} ({{PVSC}})},
  author = {Paudyal, B. B. and McIntosh, K. R. and Macdonald, D. H.},
  year = {2009},
  pages = {001588--001593},
  doi = {10.1109/PVSC.2009.5411380},
  abstract = {Temperature controlled photoconductance is applied to measure the electron and hole capture cross sections of interstitial iron and iron-boron pairs in crystalline silicon. The injection-dependent lifetime was measured before and after light soaking over the range 0-90\textdegree{}C, and without light soaking over the range 240-320\textdegree{}C. The data was then analysed to determine the electron and hole capture cross sections of the interstitial iron defect over the range 240-320\textdegree{}C, and of the iron-boron defect over the range 0-90\textdegree{}C. The first of these analyses involved a novel approach that independently distinguishes the capture cross sections assuming a known defect density, energy level and thermal velocity, whereas the latter involved the \textquestiondown{}characteristic cross-over point\textquestiondown{} method, which compares carrier lifetime before and after the dissociation of iron-boron pairs. This approach independently determines the temperature dependence of the capture cross sections over a wide range of temperature and identifies their capture mechanisms.},
  file = {/home/arch/Zotero/storage/8XXVWJBT/2009Temperature_dependent_electron_and_hole.pdf},
  keywords = {InDatabase,iron,iron-boron,lifetime spectroscopy,LS-I,LS-T}
}

@article{paudyal2009a,
  title = {Temperature Dependent Carrier Lifetime Studies on {{Ti}}-Doped Multicrystalline Silicon},
  author = {Paudyal, B. B. and McIntosh, K. R. and Macdonald, D. H.},
  year = {2009},
  volume = {105},
  pages = {124510},
  issn = {0021-8979},
  doi = {10.1063/1.3139286},
  file = {/home/arch/Zotero/storage/UQXILEAI/2009Temperature_dependent_carrier_lifetime.pdf;/home/arch/Zotero/storage/7LZMZX5T/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects,InDatabase,photoconductance,silicon,titanium},
  number = {12}
}

@article{paudyal2010,
  title = {Temperature Dependent Carrier Lifetime Studies of {{Mo}} in Crystalline Silicon},
  author = {Paudyal, Bijaya B. and McIntosh, Keith R. and Macdonald, Daniel H. and Coletti, Gianluca},
  year = {2010},
  volume = {107},
  pages = {054511},
  issn = {0021-8979},
  doi = {10.1063/1.3309833},
  file = {/home/arch/Zotero/storage/3Q4JP4QD/2010_Temperature_dependent_carrier.pdf;/home/arch/Zotero/storage/8UQ6G45X/1.html;/home/arch/Zotero/storage/R3G4IQI7/Temperature dependent carrier lifetime studies of Mo in crystalline silicon_ Journal of Applied Physics_ Vol 107, No 5.html},
  journal = {Journal of Applied Physics},
  keywords = {defects,Mo,photoconductance,silicon,ToGoInDatabase},
  number = {5}
}

@article{pearton1984,
  title = {Electrical Properties of Deep Silver- and Iron-Related Centres in Silicon},
  author = {Pearton, S. J. and Tavendale, A. J.},
  year = {1984},
  volume = {17},
  pages = {6701--6710},
  issn = {0022-3719},
  doi = {10.1088/0022-3719/17/36/023},
  abstract = {Deep-level defects related to silver and iron in n- and p-type silicon have been investigated using deep-level transient capacitance spectroscopy. In n-type silicon, a silver-related electron trapping state at Ec-0.54 eV was observed, whilst in p-type silicon a hole-trapping state at Ev+0.29 eV was dominant, in agreement with values previously assigned to acceptor and donor states respectively. In iron-diffused silicon, a hole-trapping level at Ev+0.32 eV was observed in the p-type samples. All of these defects were passivated by reaction with atomic hydrogen, and concentration profiles for the two silver-related centres were measured as functions of the temperature of the exposure to the hydrogen plasma. Gamma irradiation produced an additional silver-related hole-trapping level at Ev+0.48 eV, and an iron-related hole-trapping level at Ev+0.39 eV in p-type samples. Both of these centres have been observed in doped samples quenched from 1175 degrees C. Finally, the room-temperature motion of the silver-related hole-trapping (donor) centre (Ev+0.29 eV) under the influence of the electric field in reverse-biased junction diodes is reported. An estimate for the mobility of 2*10-14 cm2 V-1 s-1 at 25 degrees C was obtained for the centres associated with this level.},
  file = {/home/arch/Zotero/storage/MJE2VUHQ/1984Electrical_properties_of_deep_silver-.pdf},
  journal = {Journal of Physics C: Solid State Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,iron,silver},
  language = {en},
  number = {36}
}

@article{pettersson1990,
  title = {Electric-Field-Enhanced Electron Emission from Isolated Sulfur and Selenium Donors in Silicon},
  author = {Pettersson, H. and Grimmeiss, H. G.},
  year = {1990},
  volume = {42},
  pages = {1381--1387},
  doi = {10.1103/PhysRevB.42.1381},
  abstract = {The electric field effect on the thermal electron emission of isolated sulfur and selenium centers was studied in silicon. Various degrees of field dependences were observed for all centers except for the neutral sulfur center, which exhibited almost no field effect. Taking the measured field dependences into account it is shown that the zero-field enthalpies are in good agreement with previously measured optical binding energies. However, experimental evidence suggests that field-effect studies are not always reliable measurement techniques to identify whether the defect studied is an acceptor or a donor level.},
  file = {/home/arch/Zotero/storage/XY4Q9JWP/1990Electric-field-enhanced_electron.pdf;/home/arch/Zotero/storage/QULK3KIQ/PhysRevB.42.html},
  journal = {Physical Review B},
  keywords = {defects in semiconductors,DLTS,InDatabase,selenium,silicon,sulfur},
  number = {2}
}

@article{pettersson1991,
  title = {Electrical and Optical Properties of Molybdenum and Tungsten Related Defects in Silicon},
  author = {Pettersson, H. and Grimmeiss, H. G. and Tilly, L. and Schmalz, K. and Tittelbach, K. and Kerkow, H.},
  year = {1991},
  volume = {6},
  pages = {237},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/6/4/002},
  abstract = {Molybdenum- and tungsten-doped silicon has been investigated using junction space charge techniques. The energy levels were located at E v =+0.298 eV and E v =+0.379 for Mo and W, respectively, at 80 K. In both Mo- and W-doped samples a midgap level, probably process induced, was observed. Optical threshold energies of both centres are in good agreement with calculated changes in Gibbs' free energy, indicating a negligible lattice relaxation.},
  file = {/home/arch/Zotero/storage/PA5J7NBL/1991_Electrical_and_optical.pdf},
  journal = {Semiconductor Science and Technology},
  keywords = {InDatabase,molybdenum,tungsten},
  language = {en},
  number = {4}
}

@article{post2019,
  title = {Imaging {{Interstitial Iron Concentrations}} in {{Gallium}}-{{Doped Silicon Wafers}}},
  author = {Post, Regina and Niewelt, Tim and Sch{\"o}n, Jonas and Schindler, Florian and Schubert, Martin C.},
  year = {2019},
  pages = {1800655},
  issn = {18626300},
  doi = {10.1002/pssa.201800655},
  file = {/home/arch/Zotero/storage/9BL6KG56/2019_Imaging_Interstitial_Iron.pdf},
  journal = {physica status solidi (a)},
  keywords = {defects in semiconductors,InDatabase,iron-galium,silicon},
  language = {en}
}

@article{pugnet1976,
  title = {Energy Levels for Platinum and Palladium in Silicon Measured by the Dark Transient Capacitance Technique},
  author = {Pugnet, M. and Barbolla, J. and Brabant, J. C. and Saint-Yves, F. and Brousseau, M.},
  year = {1976},
  volume = {35},
  pages = {533--543},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210350215},
  abstract = {The energy levels and electrically active concentrations for platinum in n- and p-type Si, and for palladium in n-type silicon are measured by the dark transient capacitance technique, p+\textemdash{}n\textemdash{}p+ and n+\textemdash{}p\textemdash{}n+ structures have been platinum-diffused at low temperatures (820 to 844 \textdegree{}C). Two levels are found, a donor at Ev + 0.32 eV in p-type silicon and an acceptor at Ec \textemdash{} 0.24 eV in n-type silicon. These two levels are associated with the usual substitutional site (Pt(I)). The second usual site (Pt(II)) does not appear in samples, p+\textemdash{}n\textemdash{}p+ structures have been palladium-diffused at 898 \textdegree{}C. An acceptor level at Ec \textemdash{} 0.20 eV is found which is probably associated with the substitutional site of palladium in silicon.},
  copyright = {Copyright \textcopyright{} 1976 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/2FUTPXAJ/1976_Energy_levels_for_platinum.pdf;/home/arch/Zotero/storage/44GSDKLM/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  language = {en},
  number = {2}
}

@article{rein2005,
  title = {Electronic Properties of Interstitial Iron and Iron-Boron Pairs Determined by Means of Advanced Lifetime Spectroscopy},
  author = {Rein, S. and Glunz, S. W.},
  year = {2005},
  volume = {98},
  pages = {113711},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.2106017},
  abstract = {As dissolved iron is one of the most common lifetime-killing contaminants in silicon, its coexisting defect configurations, interstitial iron (Fei) and iron-boron pairs (FeB), are investigated on an intentionally iron-contaminated silicon sample by means of temperature-dependent lifetime spectroscopy (TDLS) and injection-dependent lifetime spectroscopy (IDLS). In good agreement with the literature, the study identifies the known Fei donor level at Et\textendash{}EV=(0.394{$\pm$}0.005)eV and determines its symmetry factor as k=sigman/sigmap=51{$\pm$}5, which is an order of magnitude lower than expected from the literature. Using the well-confirmed k factor, the poorly confirmed electron-capture cross section is redetermined as sigman=(3.6{$\pm$}0.4)\texttimes{}10\textendash{}15  cm2 at 300  K. In addition, the observed exponential sigma(T) dependence identifies the multiphonon emission mechanism as the dominant capture mechanism for electrons with an activation energy E[infinity]=0.024  eV. Concerning the defect related to the iron-boron pair, the study unambiguously identifies the deep FeB acceptor level as the dominant FeB recombination center. While the known average value EC\textendash{}Et=(0.26{$\pm$}0.03)eV for the energy level is well confirmed, the symmetry factor is determined as k=0.45, which represents an intermediate value among the scattered results from the literature. Additional spectroscopic information from the defect transformation allows both capture cross sections of the FeB defect to be determined (sigman=2.5\texttimes{}10\textendash{}15  cm2 and sigmap=5.5\texttimes{}10\textendash{}15  cm2). Being suggested as a fingerprint of iron in the literature, the crossover position of the Fei- and FeB-dominated IDLS curves (at 300  K) is experimentally proved to be doping dependent which is accurately predicted on the basis of the extracted set of Fei and FeB defect parameters. An additional fingerprint of iron is found by the qualitative change of the TDLS curve upon illumination and its S-like shape under dark conditions, which represents a robust criterion for unambiguous identification of iron in silicon. As the most sensitive technique to detect and determine an iron contamination in silicon heavily relies on the Fei and FeB defect parameters, the spectroscopic results are of special practical importance. \textcopyright{}2005 American Institute of Physics},
  file = {/home/arch/Zotero/storage/WEXNYG6R/2005_Electronic_properties_of.pdf},
  journal = {Journal of Applied Physics},
  keywords = {injection dependent lifetime,minority carrier lifetime,temperature dependent lifetime},
  language = {en},
  number = {11}
}

@book{rein2005a,
  title = {{Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications}},
  shorttitle = {{Lifetime spectroscopy}},
  author = {Rein, Stefan},
  year = {2005},
  publisher = {{Springer}},
  address = {{Berlin}},
  doi = {10.1007/3-540-27922-9},
  file = {/home/arch/Zotero/storage/67XDJ3BT/2005_Lifetime_Spectroscopy_A.pdf},
  isbn = {978-3-540-25303-7},
  keywords = {injection dependent lifetime,minority carrier lifetime,temperature dependent lifetime},
  language = {eng ger},
  note = {OCLC: 254581580},
  number = {85},
  series = {{Springer series in materials science}}
}

@article{rohatgi1980,
  title = {The Impact of Molybdenum on Silicon and Silicon Solar Cell Performance},
  author = {Rohatgi, A. and Hopkins, R. H. and Davis, J. R. and Campbell, R. B. and Mollenkopf, H. C.},
  year = {1980},
  volume = {23},
  pages = {1185--1190},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(80)90032-5},
  abstract = {Deep level transient spectroscopy coupled with dark and lighted I\textendash{}V measurements were used to study the electrical properties of silicon crystals and solar cells purposely contaminated with controlled amounts of molybdenum. Mo severely degrades minority carrier lifetime, and hence solar cell performance, by inducing a recombination center at EV + 0.30 eV. Neither HCl nor POCl3 gettering at temperatures as high as 1100\textdegree{}C and times up to five hours mitigate the effects of Mo. Because the Mo segregation coefficient is small, 4.5 \texttimes{} 10-8, impurity contamination of silicon during crystal growth can be kept below the levels for which electrical properties are affected.},
  file = {/home/arch/Zotero/storage/8GT2RCZY/1980_The_impact_of_molybdenum_on.pdf;/home/arch/Zotero/storage/ATBS6AM7/0038110180900325.html},
  journal = {Solid-State Electronics},
  keywords = {aluminium,defects in semiconductors,InDatabase,silicon},
  number = {11}
}

@article{rosenits2007,
  title = {Determining the Defect Parameters of the Deep Aluminum-Related Defect Center in Silicon},
  author = {Rosenits, Philipp and Roth, Thomas and Glunz, Stefan W. and Beljakowa, Svetlana},
  year = {2007},
  volume = {91},
  pages = {122109},
  issn = {0003-6951},
  doi = {10.1063/1.2789378},
  abstract = {Through a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This aluminum-related defect center is found to be located at an energy level of Et-EV=0.44{$\pm$}0.02eVEt-EV=0.44{$\pm$}0.02eV{$<$}math display="inline" overflow="scroll" altimg="eq-00001.gif"{$><$}mrow{$><$}msub{$><$}mi{$>$}E{$<$}/mi{$><$}mi{$>$}t{$<$}/mi{$><$}/msub{$><$}mo{$>-<$}/mo{$><$}msub{$><$}mi{$>$}E{$<$}/mi{$><$}mi{$>$}V{$<$}/mi{$><$}/msub{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}0.44{$<$}/mn{$><$}mo{$>\pm{}<$}/mo{$><$}mn{$>$}0.02{$<$}/mn{$><$}mspace width="0.3em"{$><$}/mspace{$><$}mi{$>$}eV{$<$}/mi{$><$}/mrow{$><$}/math{$>$} and exhibits an asymmetric capture cross section, with {$\sigma$}p=3.6\texttimes{}10-13cm2{$\sigma$}p=3.6\texttimes{}10-13cm2{$<$}math display="inline" overflow="scroll" altimg="eq-00002.gif"{$><$}mrow{$><$}msub{$><$}mi{$>\sigma{}<$}/mi{$><$}mi{$>$}p{$<$}/mi{$><$}/msub{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}3.6{$<$}/mn{$><$}mo{$>\times{}<$}/mo{$><$}msup{$><$}mn{$>$}10{$<$}/mn{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}13{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}mspace width="0.3em"{$><$}/mspace{$><$}msup{$><$}mi{$>$}cm{$<$}/mi{$><$}mn{$>$}2{$<$}/mn{$><$}/msup{$><$}/mrow{$><$}/math{$>$} and {$\sigma$}n=3.1\texttimes{}10-10cm2{$\sigma$}n=3.1\texttimes{}10-10cm2{$<$}math display="inline" overflow="scroll" altimg="eq-00003.gif"{$><$}mrow{$><$}msub{$><$}mi{$>\sigma{}<$}/mi{$><$}mi{$>$}n{$<$}/mi{$><$}/msub{$><$}mo{$>$}={$<$}/mo{$><$}mn{$>$}3.1{$<$}/mn{$><$}mo{$>\times{}<$}/mo{$><$}msup{$><$}mn{$>$}10{$<$}/mn{$><$}mrow{$><$}mo{$>-<$}/mo{$><$}mn{$>$}10{$<$}/mn{$><$}/mrow{$><$}/msup{$><$}mspace width="0.3em"{$><$}/mspace{$><$}msup{$><$}mi{$>$}cm{$<$}/mi{$><$}mn{$>$}2{$<$}/mn{$><$}/msup{$><$}/mrow{$><$}/math{$>$} being the hole and electron capture cross sections, respectively. The investigated defect center is attributed to the aluminum-oxygen complex (Al\textendash{}O).},
  file = {/home/arch/Zotero/storage/FMV2AWFR/2007_Determining_the_defect.pdf;/home/arch/Zotero/storage/4SGUZTDN/1.html},
  journal = {Applied Physics Letters},
  keywords = {AlO,defects in semiconductors,DLTS,lifetime spectroscopy,ToGoInDatabase},
  number = {12}
}

@article{rosenits2011,
  title = {Erratum on ``{{Determining}} the Defect Parameters of the Deep Aluminum-Related Defect Center in Silicon'' [{{Appl}}. {{Phys}}. {{Lett}}. 91, 122109 (2007)]},
  author = {Rosenits, Philipp and Roth, Thomas and Glunz, Stefan W.},
  year = {2011},
  volume = {99},
  pages = {239904},
  issn = {0003-6951},
  doi = {10.1063/1.3652753},
  file = {/home/arch/Zotero/storage/SZZYEUU4/2011_Erratum_on_“Determining_the.pdf;/home/arch/Zotero/storage/2S6XSS7P/1.html},
  journal = {Applied Physics Letters},
  keywords = {ToGoInDatabase},
  number = {23}
}

@article{rosier1971,
  title = {Thermal Emission and Capture of Electrons at Sulfur Centers in Silicon},
  author = {Rosier, L. L. and Sah, C. T.},
  year = {1971},
  volume = {14},
  pages = {41--54},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(71)90047-5},
  abstract = {The electron thermal emission and capture rates and the electron impact ionization rate of trapped electrons at the sulfur donor centers in the depletion region of reverse biased silicon p-n junctions have been measured by the dark capacitance and current transient methods. Least square fits of the low field data give the following electron thermal emission rates: en0t = 1.64 \texttimes{} 1010(T/300\textdegree{}K)2exp [-276/kT] sec for the neutral center and en-1t = 1.03 \texttimes{} 1012 (T/300\textdegree{}K)2 exp [-528/kT] sec for the singly ionized center where kT is in meV. The thermal activation energies are then 276 and 528 meV respectively. The hole emission rates are much smaller and not determined. The electric field dependences of the thermal emission rates of electrons are considerably smaller than that predicted by the Poole-Frenkel theory applied to the ground state: en0t increased by 1.5 at 130\textdegree{}K from 0.2 to 1.0 \texttimes{} 105 V/cm and en-1t by 3 at 200\textdegree{}K. Electron capture coefficients are obtained from capacitance transient during steady state electron injection into the junction depletion layer either by transistor emitter or by optical generation at the surface next to the junction. The electron capture rate at the doubly charged center, cn-2t, decreases from 5 \texttimes{} 10-7 cm3/sec at 3 \texttimes{} 104 V/cm to 10-7 cm3/sec at 1.0 \texttimes{} 105 V/cm with essentially no temperature dependence. The electron capture rate at the singly ionized centers, cn-1t, obtained at 82\textdegree{}K was about two orders of magnitude smaller than cn-2t but had essentially the same electric field dependence. The electron impact ionization rate of trapped electrons at the neutral centers and its electric field dependences were also determined at 82\textdegree{}K.
R{\'e}sum{\'e}
L'{\'e}mission thermique d'{\'e}lectrons et les taux de capture et le taux d'ionisation de percussion d'{\'e}lectrons prisonniers aux centres donneurs de soufre dans la r{\'e}gion d'{\'e}puisement de jonctions p-n au silicium {\`a} polarisation inverse ont {\'e}t{\'e} mesur{\'e}s par les m{\'e}thodes transitoires de courant et de capacit{\'e} noires. Les formes carr{\'e}es minimum des donn{\'e}es en champ faible donnent les taux d'{\'e}mission thermique d'{\'e}lectrons suivants: en0t = 1,64 \texttimes{} 1010(T/300\textdegree{}K)2 exp [-276/kT] sec pour le centre neutre, et en-1t = 1,03 \texttimes{} 1012(T/300\textdegree{}K)2exp [-528/kT] sec pour le centre ionis{\'e} simple o{\`u} kT est en meV. Les taux d'{\'e}mission de trous sont bien plus petits et ne sont pas d{\'e}termin{\'e}s. Les d{\'e}pendances du champ {\'e}lectrique des taux d'{\'e}mission thermique des {\'e}lectrons sont bien inf{\'e}rieurs {\`a} ceux pr{\'e}dits par la th{\'e}orie Poole-Frenkel appliqu{\'e}e {\`a} l'{\'e}tat de terre: en0t est aggrandi de 1,5 {\`a} 130\textdegree{}K de 0,2 {\`a} 1,0 \texttimes{} 105 V/cm et en-1t de 3 {\`a} 200\textdegree{}K. Les coefficients de capture d'{\'e}lectrons sont obtenus {\`a} partir de la transition de capacit{\'e} pendant l'injection d'{\'e}lectrons {\`a} l'{\'e}tat {\'e}quilibr{\'e} dans la zone d'{\'e}puisement de la jonction soit par {\'e}metteur transistoris{\'e} soit par g{\'e}n{\'e}ration optique {\`a} la surface adjacente {\`a} la jonction. Le taux de capture d'{\'e}lectrons au centre doublement charg{\'e}, cn-2t, d{\'e}croit de 5 \texttimes{} 10-7 cm3/sec {\`a} 3 \texttimes{} 104 V/cm {\`a} 10-7 cm3/sec {\`a} 1.0 \texttimes{} 105 V/cm pratiquement sans {\^e}tre d{\'e}pendant de la temp{\'e}rature. Le taux de capture d'{\'e}lectrons aux centres simplement ionis{\'e}s, cn-1t, obtenu {\`a} 82\textdegree{}K {\'e}tait d'environ deux ordres de grandeur inf{\'e}rieur {\`a} cn-2t mais {\'e}tait semblablement d{\'e}pendant du champ {\'e}lectrique. Il a {\'e}galement {\'e}t{\'e} d{\'e}termin{\'e}{\`a} 82\textdegree{}K le taux d'ionisation de percussion d'{\'e}lectrons prisonniers aux centres neutres et leur d{\'e}pendance du champ {\'e}lectrique.
Zusammenfassung
Mittels Kapazit{\"a}tsmessung und Beobachtung des Zeitverhaltens des Stromflusses wurden die thermischen Emissions- und Einfangraten sowie die Ionisationsraten eingefangener Elektronen f{\"u}r Schwefeldonatoren im Bereich der Verarmungszone eines in Sperrichtung gepolten Silizium-pn-{\"U}berganges bestimmt. Die Methode der kleinsten quadratischen Abweichung liefert f{\"u}r die Emissionsrate des neutralen Donators en0t = 1,64 . 1010. (T/300 K)2 exp (-276/kT) sec und f{\"u}r den Fall einfacher Ionisation en-1t = 1,03 . 1012 (T/300 K)2 exp (-528/kT) sec, wobei kT in Einheiten von meV einzusetzen ist. Die thermischen Aktivierungsenergien betragen dementsprechend 276 und 528 meV. Die Emissionsraten f{\"u}r L{\"o}cher sind geringer und wurden nicht bestimmt. Die Abh{\"a}ngigkeit der Emissionsraten vom elektrischen Feld ist wesentlich kleiner als sie die Poole-Frenkel-Theorie liefert: en0t ist gr{\"o}{\ss}er um einen Faktor 1,5 bei 130 K (zwischen 0,2 und 1,0 . 105 V/cm), und en-1t um einen Faktor 2 bei 200 K. Die Einfangkoeffizienten f{\"u}r Elektronen wurden bei einer station{\"a}ren Elektroneninjektion in die Verarmungsschicht entweder {\"u}ber den Emitter eines Transistors oder durch optische Generation in der dem pn-{\"U}bergang n{\"a}chstgelegenen Oberfl{\"a}che aus dem Zeitverhalten der Kapazit{\"a}t bestimmt. Die Einfangrate f{\"u}r den doppelt geladenen Donator cn-2t nimmt unabh{\"a}ngig von der Temperatur von 5 . 10-7 cm3/s bei 3 . 104 V/cm auf 1 . 107 cm2/s bei 1 . 105 V/cm ab. Die Einfangrate cn-1t f{\"u}r den einfachen geladenen Donator lag bei 82 K etwa zwei Gr{\"o}{\ss}enordnungen unter dem Wert f{\"u}r cn-2t; sie zeigte jedoch keine Abh{\"a}ngigkeit vom elektrischen Feld. Die Sto{\ss}ionisationsrate f{\"u}r eingefangene Elektronen Zentren sowie ihre Feldabh{\"a}ngigkeit wurden ebenfalls bei 82 K ermittelt.},
  file = {/home/arch/Zotero/storage/AYBKHLPQ/1971_Thermal_emission_and_capture.pdf;/home/arch/Zotero/storage/C3Q9NZFV/0038110171900475.html},
  journal = {Solid-State Electronics},
  number = {1}
}

@phdthesis{roth2008,
  title = {Analysis of Electrically Active Defects in Silicon for Solar Cells},
  author = {Roth, Thomas},
  year = {2008},
  address = {{germany}},
  abstract = {The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.},
  copyright = {terms-of-use},
  file = {/home/arch/Zotero/storage/L6GIGYDZ/2008Analysis_of_electrically_active_defects.pdf;/home/arch/Zotero/storage/EJS8UZUU/5029.html},
  isbn = {3868530363, 9783868530360},
  keywords = {aluminium,defects in semiconductors,DLTS,InDatabase,LS-I,LS-T,manganese,Silicon,titanium,tungsten},
  language = {eng},
  school = {University Konstanz}
}

@article{sadoh1991,
  title = {Diffusion of Vanadium in Silicon},
  author = {Sadoh, T. and Nakashima, H.},
  year = {1991},
  volume = {58},
  pages = {1653--1655},
  issn = {0003-6951},
  doi = {10.1063/1.105154},
  file = {/home/arch/Zotero/storage/KXS7QFMS/1991_Diffusion_of_vanadium_in.pdf},
  journal = {Applied Physics Letters},
  keywords = {diffusivity,DLTS,InDatabase,vanadium,vanadium  hydrogen},
  number = {15}
}

@article{sadoh1992,
  title = {Deep Levels of Vanadium and Vanadium-hydrogen Complex in Silicon},
  author = {Sadoh, T. and Nakashima, H. and Tsurushima, T.},
  year = {1992},
  volume = {72},
  pages = {520--524},
  issn = {0021-8979},
  doi = {10.1063/1.352353},
  file = {/home/arch/Zotero/storage/TJCUGT7B/1992_Deep_levels_of_vanadium_and.pdf;/home/arch/Zotero/storage/G4X4VQXW/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,InDatabase,vanadium,vanadium  hydrogen},
  number = {2}
}

@article{sah1967,
  title = {Recombination {{Properties}} of the {{Gold Acceptor Level}} in {{Silicon}} Using the {{Impurity Photovoltaic Effect}}},
  author = {Sah, C. T. and Tasch, A. F. and Schroder, D. K.},
  year = {1967},
  volume = {19},
  pages = {71--72},
  doi = {10.1103/PhysRevLett.19.71},
  abstract = {DOI:https://doi.org/10.1103/PhysRevLett.19.71},
  file = {/home/arch/Zotero/storage/GETPJK6H/1967_Recombination_Properties_of.pdf;/home/arch/Zotero/storage/HGE8ACWX/PhysRevLett.19.html},
  journal = {Physical Review Letters},
  number = {2}
}

@article{sah1969,
  title = {Thermal Emission Rates of Carriers at Gold Centers in Silicon},
  author = {Sah, C. T. and Forbes, L. and Rosier, L. I. and Tasch, A. F. and Tole, A. B.},
  year = {1969},
  volume = {15},
  pages = {145--148},
  issn = {0003-6951},
  doi = {10.1063/1.1652943},
  file = {/home/arch/Zotero/storage/YVN7NDUE/1969_Thermal_emission_rates_of.pdf;/home/arch/Zotero/storage/D43S9KCF/1.html},
  journal = {Applied Physics Letters},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {5}
}

@article{sah1975,
  title = {Experiments on the Origin of Process-induced Recombination Centers in Silicon},
  author = {Sah, C. T. and Wang, C. T.},
  year = {1975},
  volume = {46},
  pages = {1767--1776},
  issn = {0021-8979},
  doi = {10.1063/1.321758},
  file = {/home/arch/Zotero/storage/BFCHK4I8/1975_Experiments_on_the_origin_of.pdf;/home/arch/Zotero/storage/LWFGRN47/1.html},
  journal = {Journal of Applied Physics},
  number = {4}
}

@article{sah1981,
  title = {Effect of Zinc Impurity on Silicon Solar-Cell Efficiency},
  author = {Sah, Chih-Tang and Chan, Phillip Ching Ho and Wang, Chi-Kuo and Sah, R. L. Y. and Yamakawa, K. A. and Lutwack, R.},
  year = {1981},
  volume = {28},
  pages = {304--313},
  issn = {0018-9383},
  doi = {10.1109/T-ED.1981.20333},
  abstract = {Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project,1the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 \texttimes{} 1011Zn/cm3in the p-base n+/p/p+ cell and 7 \texttimes{} 1011Zn/cm3in the n-Base p+/n/n+ cell for a base dopant impurity concentration of 5 \texttimes{} 1014atoms/cm3. If the base dopant impurity concentration is increased by a factor of 10 to 5 \texttimes{} 1015atoms/cm3, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.},
  file = {/home/arch/Zotero/storage/MALTKLTM/1981Effect_of_zinc_impurity_on_silicon.pdf;/home/arch/Zotero/storage/KQ6BN65X/1481485.html},
  journal = {IEEE Transactions on Electron Devices},
  keywords = {DLTS-Cr,silicon,temperature,ToGoInDatabase,zinc},
  number = {3}
}

@article{sato1970,
  title = {Measurements of the {{Thermal}}-{{Emission Rates}} of {{Electrons}} and {{Holes}} at the {{Gold Centers}} in {{Silicon Using}} the {{Small}}-{{Signal}}-{{Pulsed Field Effect}}},
  author = {Sato, S. and Sah, C. T.},
  year = {1970},
  volume = {41},
  pages = {4175--4181},
  issn = {0021-8979},
  doi = {10.1063/1.1658432},
  file = {/home/arch/Zotero/storage/T2NZTDJ4/1970_Measurements_of_the.pdf;/home/arch/Zotero/storage/IFZBZVR4/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {10}
}

@article{scheffler2012,
  title = {A Re-Examination of Cobalt-Related Defects in n- and p-Type Silicon},
  author = {Scheffler, Leopold and Kolkovsky, Vladimir and Weber, J{\"o}rg},
  year = {2012},
  volume = {209},
  pages = {1913--1916},
  issn = {1862-6319},
  doi = {10.1002/pssa.201200140},
  abstract = {In the present work cobalt-doped n- and p-type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to a substitutional Co defect have different annealing behaviour and therefore belong to different defects. After wet chemical etching three other peaks (E90, E140 and H160) were observed in the samples. The intensity of the peaks becomes larger in the H-plasma treated samples. This together with depth profiling demonstrates that the peaks are hydrogen-related defects. The origin of the peaks will be discussed.},
  copyright = {Copyright \textcopyright{} 2012 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  file = {/home/arch/Zotero/storage/4KMX88G5/2012_A_re-examination_of.pdf;/home/arch/Zotero/storage/JKLDC75G/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {cobalt,cobolt-hydrogen,DLTS,electrical properties,InDatabase,silicon},
  language = {en},
  number = {10}
}

@article{scheffler2013,
  title = {Isolated Substitutional Cobalt and {{Co}}-Related Complexes in Silicon},
  author = {Scheffler, L. and Kolkovsky, Vl. and Weber, J.},
  year = {2013},
  volume = {113},
  pages = {183714},
  issn = {0021-8979},
  doi = {10.1063/1.4804321},
  abstract = {Two dominant peaks at EC\,-\,0.39\,eV and EV\,+\,0.46\,eV previously assigned to substitutional cobalt are shown to belong to different defects by high-resolution Laplace Deep Level Transient Spectroscopy. We assign the level in the upper half of the band gap to substitutional Cos, whereas the level in the lower half is attributed to a CoB pair. No electrically active levels which belong to interstitial CoiCoi{$<$}math display="inline" overflow="scroll" altimg="eq-00001.gif"{$><$}mrow{$><$}msub{$><$}mrow{$><$}mtext{$>$}Co{$<$}/mtext{$><$}/mrow{$><$}mi mathvariant="normal"{$>$}i{$<$}/mi{$><$}/msub{$><$}/mrow{$><$}/math{$>$} was found. Besides the dominant defects, a number of minor DLTS peaks were observed. We correlate these peaks with H-related defects and will also discuss their origin.},
  file = {/home/arch/Zotero/storage/WFZLCS4G/2013_Isolated_substitutional.pdf;/home/arch/Zotero/storage/P42WYQKW/1.html},
  journal = {Journal of Applied Physics},
  keywords = {cobolt,cobolt-boron,DLTS,InDatabase,Laplace DLTS,silicon},
  number = {18}
}

@article{scheffler2014,
  title = {Electrical Levels in Nickel Doped Silicon},
  author = {Scheffler, L. and Kolkovsky, Vl. and Weber, J.},
  year = {2014},
  volume = {116},
  pages = {173704},
  issn = {0021-8979},
  doi = {10.1063/1.4901003},
  file = {/home/arch/Zotero/storage/ELWC7NW9/2014_Electrical_levels_in_nickel.pdf},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,nickel,silicon},
  number = {17}
}

@article{schibli1968,
  title = {Lifetime and Capture Cross-Section Studies of Deep Impurities in Silicon},
  author = {Schibli, E and Milnes, A. G},
  year = {1968},
  volume = {2},
  pages = {229--241},
  issn = {0025-5416},
  doi = {10.1016/0025-5416(68)90036-0},
  abstract = {Many impurities in silicon have multiple energy levels lying deep in the energy gap. Such impurities may determine electron and hole trapping and recombination under non-equilibrium carrier conditions. Models for the deep energy levels and for the capture processes are described. Experimental techniques for the measurement of electron and hole capture cross-sections are compared and their relative merits considered. The present knowledge of capture cross-sections of deep impurities in silicon is essentially confined to gold, indium and zinc. Recent studies of these are reviewed, and compared with cross-sections for (a) shallow impurities in silicon and (b) deep impurities in germanium.
R{\'e}sum{\'e}
Beaucoup d'impuret{\'e}s dans le silicium ont des niveaux d'{\'e}nergie multiples situ{\'e}s {\`a} une assez grande profondeur dans la bande interdite. De telles impuret{\'e}s peuvent provoquer la capture et la recombinaison des {\'e}lectrons et des trous dans des conditions o{\`u} l'{\'e}quilibre entre porteurs n'est pas r{\'e}alis{\'e}. Des mod{\`e}les pour les niveaux d'{\'e}nergie profonds et les processes de capture sont d{\'e}crits. Les m{\'e}thodes exp{\'e}rimentales de mesure des sections efficaces de capture des {\'e}lectrons et des trous sont compar{\'e}es et leurs m{\'e}rites respectifs sont discut{\'e}s. Actuellement on ne conna{\^i}t les sections efficaces de capture relatives aux impuret{\'e}s {\`a} niveaux d'{\'e}nergie profonds du silicium que dans le cas de l'or, de l'indium et du zinc. Les mesures r{\'e}centes sont pass{\'e}es en revue et compar{\'e}es aux valeurs obtenues (a) pour les impuret{\'e}s {\`a} niveaux d'{\'e}nergie peu profonds dans le silicium, (b) pour les impuret{\'e}s {\`a} niveaux d'{\'e}nergie profonds dans le germanium.
Zusammenfassung
Viele Fremdatome in Silizium haben vielfache Energieniveaus tief in der Energiel{\"u}cke. Solche Fremdatome k{\"o}nnen das Einfangen oder die Rekombination von Elektronen und L{\"o}chern under Nichtgleichgewichtsbedingungen bestimmen. Es werden Modelle der tiefen Energiezust{\"a}nde und der Einfangprozesse beschrieben. Experimentelle Methoden zur Messung des Einfangquerschnitts von Elektronen und L{\"o}chern werden miteinander verglichen und ihre jeweiligen Vorz{\"u}ge betrachtet. Die derzeitige Kenntnis der Einfangquerschnitte tiefer Fremdatome in Silizium beschr{\"a}nkt sich im wesentlichen auf Gold, Indium und Zink. Neure einschl{\"a}gige Experimente werden zusammengestellt und mit den Einfangquerschnitten niedriger Fremdniveaus in Silizium und tiefer Fremdniveaus in Germanium verglichen.},
  file = {/home/arch/Zotero/storage/R9UQBGLE/1968_Lifetime_and_capture.pdf;/home/arch/Zotero/storage/P5MDREY4/0025541668900360.html},
  journal = {Materials Science and Engineering},
  keywords = {germanium,lifetime spectroscopy,review,silicon,ToGoInDatabase},
  number = {5}
}

@article{schmidt2005,
  title = {Recombination Activity of Iron-Gallium and Iron-Indium Pairs in Silicon},
  author = {Schmidt, Jan and Macdonald, Daniel},
  year = {2005},
  volume = {97},
  pages = {113712},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.1929096},
  file = {/home/arch/Zotero/storage/NJ43N4VJ/2005_Recombination_activity_of.pdf},
  journal = {Journal of Applied Physics},
  keywords = {Galium,InDatabase,Indium,Iron,silicon},
  language = {en},
  number = {11}
}

@article{schmidt2007,
  title = {Recombination Activity of Interstitial Chromium and Chromium-Boron Pairs in Silicon},
  author = {Schmidt, Jan and Krain, Rafael and Bothe, Karsten and Pensl, Gerhard and Beljakowa, Svetlana},
  year = {2007},
  volume = {102},
  pages = {123701},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.2822452},
  file = {/home/arch/Zotero/storage/CAUM4RAK/2007_Recombination_activity_of.pdf},
  journal = {Journal of Applied Physics},
  language = {en},
  number = {12}
}

@article{shiraishi1999,
  title = {{{DLTS}} Analysis of Nickel\textendash{}Hydrogen Complex Defects in Silicon},
  author = {Shiraishi, M. and Sachse, J. -U. and Lemke, H. and Weber, J.},
  year = {1999},
  volume = {58},
  pages = {130--133},
  issn = {0921-5107},
  doi = {10.1016/S0921-5107(98)00280-3},
  abstract = {The results of a deep level transient spectroscopy (DLTS) study of nickel\textendash{}hydrogen complexes in n- and p-type silicon are presented. Hydrogen is incorporated by wet-chemical etching. After etching, eleven electrically active Ni\textendash{}H related levels are observed. Heat treatment enables us to investigate the thermal stability of Ni\textendash{}H complexes. Possible structures of the Ni\textendash{}H defects are proposed.},
  file = {/home/arch/Zotero/storage/UHU8VLSG/1999_DLTS_analysis_of.pdf;/home/arch/Zotero/storage/XSNNV3W5/S0921510798002803.html},
  journal = {Materials Science and Engineering: B},
  keywords = {DLTS,Hydrogen,InDatabase,nickel,Silicon,Transition metal},
  number = {1}
}

@article{sklensky1972,
  title = {Photoelectronic {{Properties}} of {{Zinc Impurity}} in {{Silicon}}},
  author = {Sklensky, Alden F. and Bube, Richard H.},
  year = {1972},
  volume = {6},
  pages = {1328--1336},
  doi = {10.1103/PhysRevB.6.1328},
  abstract = {Zinc impurity in high-resistivity n-type-silicon single crystals exhibits the properties of a sensitizing center for photoconductivity; the electron lifetime is increased by a factor of 104 to a value of 100 msec at 80 \textdegree{}K. A variety of photoelectronic measurements are used to determine the location of the Zn-2 energy level with respect to the conduction- and valence-band edges, the density of zinc centers, the change in scattering cross section upon photoexcitation, the electron-capture cross section of the Zn-1 center as a function of temperature, and the existence and properties of other imperfection states. Optical quenching of photoconductivity indicates an electron-capture cross section of the Zn-1 center which is about 10-20 cm2 and independent of temperature below 50 \textdegree{}K, and which decreases exponentially with 1T at higher temperatures with an activation energy of 40 meV. Measurements of temperature dependence of steady-state lifetime and of photoconductivity decay time are consistent.},
  file = {/home/arch/Zotero/storage/I9M9PAM5/1972Photoelectronic_Properties_of.pdf;/home/arch/Zotero/storage/U5BPYMFR/PhysRevB.6.html},
  journal = {Physical Review B},
  keywords = {defects in semiconductors,InDatabase,lifetime,LS-M,LS-T,multivalent defect analysis,photoconductance,silicon,zinc},
  number = {4}
}

@article{sun2014,
  title = {Reassessment of the Recombination Parameters of Chromium in N- and p-Type Crystalline Silicon and Chromium-Boron Pairs in p-Type Crystalline Silicon},
  author = {Sun, Chang and Rougieux, Fiacre E. and Macdonald, Daniel},
  year = {2014},
  volume = {115},
  pages = {214907},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.4881497},
  file = {/home/arch/Zotero/storage/SUL7AUT3/2014_Reassessment_of_the.pdf},
  journal = {Journal of Applied Physics},
  keywords = {chromium,chromium boron,InDatabase,silicon},
  language = {en},
  number = {21}
}

@article{taft1954,
  title = {Gold as a {{Donor}} in {{Silicon}}},
  author = {Taft, E. A. and Horn, F. Hubbard},
  year = {1954},
  volume = {93},
  pages = {64--64},
  doi = {10.1103/PhysRev.93.64},
  abstract = {Resistivity-temperature data show gold produces a donor level 0.33 ev above the occupied band in silicon.},
  file = {/home/arch/Zotero/storage/WD82TICV/1954_Gold_as_a_Donor_in_Silicon.pdf;/home/arch/Zotero/storage/VMMI86HF/PhysRev.93.html},
  journal = {Physical Review},
  keywords = {defects in semiconductors,gold,InDatabase,silicon},
  number = {1}
}

@article{tavendale1983,
  title = {Deep Level, Quenched-in Defects in Silicon Doped with Gold, Silver, Iron, Copper or Nickel},
  author = {Tavendale, A J and Pearton, S J},
  year = {1983},
  volume = {16},
  pages = {1665--1673},
  issn = {0022-3719},
  doi = {10.1088/0022-3719/16/9/011},
  abstract = {Deep level defects produced by quenching from 1175"C silicon doped with Au, Ag, Fe, Cu or Ni have been observed using transient capacitance spectroscopy. In both Au- and Ag-doped samples a hole trap at E, + 0.48 eV was observed, with an electron trap at E, - 0.28 eV present in the Au-doped material. In quenched, Fe-doped samples three hole traps were observed (E, + 0.32 eV, E, + 0.39 eV, E, + 0.40 eV), in agreement with + previous measurements. In both Cu- and Ni-doped samples, one hole trap was observed (E, 0.53 eV for Cu, E, + 0.33 eV for Ni), which was also seen in the as-diffused material.},
  file = {/home/arch/Zotero/storage/LM5QPFCT/1983_Deep_level,_quenched-in.pdf},
  journal = {Journal of Physics C: Solid State Physics},
  keywords = {defects in semiconductors,DLTS,gold,hydrogenation,InDatabase,iron,nickel,silicon,silver},
  language = {en},
  number = {9}
}

@article{tilly1991,
  title = {Electrical and Optical Properties of Titanium-Related Centers in Silicon},
  author = {Tilly, L. and Grimmeiss, H. G. and Pettersson, H. and Schmalz, K. and Tittelbach, K. and Kerkow, H.},
  year = {1991},
  volume = {43},
  pages = {9171--9177},
  doi = {10.1103/PhysRevB.43.9171},
  abstract = {Titanium-doped silicon was investigated using junction space-charge techniques. Apart from a midgap level at about Ec-0.6 eV, three energy levels were observed at Ec-0.065 eV (A level), Ec-0.295 eV (B level), and Ev+0.255 eV (C level) at 80 K. Electron excitation processes of the upper levels revealed values of 0.077 and 0.268 eV, respectively, for the change in enthalpy, as well as 2k and -4k, respectively, for the change in entropy. The corresponding values for holes of the C center are 0.258 eV and 0.5k, respectively. The Gibb's free energy as a function of temperature was calculated for all three levels and found to be in good agreement with the threshold energies of the corresponding photoionization cross section. Only small, if any, lattice-relaxation effects are expected.},
  file = {/home/arch/Zotero/storage/ZFFYRG3C/1991_Electrical_and_optical.pdf;/home/arch/Zotero/storage/N7MUCE8J/PhysRevB.43.html;/home/arch/Zotero/storage/UUID257K/PhysRevB.43.html},
  journal = {Physical Review B},
  keywords = {defects in semiconductors,InDatabase,silicon,titanium},
  number = {11}
}

@article{tilly1991a,
  title = {Electrical and Optical Properties of Vanadium-Related Centers in Silicon},
  author = {Tilly, L. and Grimmeiss, H. G. and Pettersson, H. and Schmalz, K. and Tittelbach, K. and Kerkow, H.},
  year = {1991},
  volume = {44},
  pages = {12809--12814},
  issn = {0163-1829, 1095-3795},
  doi = {10.1103/PhysRevB.44.12809},
  file = {/home/arch/Zotero/storage/CH3Z9PUT/1991Electrical_and_optical_properties_of.pdf},
  journal = {Physical Review B},
  keywords = {DLTS,optical capture cross sections,vanadium},
  language = {en},
  number = {23}
}

@article{tokumaru1982,
  title = {Deep {{Levels Associated}} with {{Nitrogen}} in {{Silicon}}},
  author = {Tokumaru, Yozo and Okushi, Hideyo and Masui, Tsumoru and Abe, Takao},
  year = {1982},
  volume = {21},
  pages = {L443},
  issn = {1347-4065},
  doi = {10.1143/JJAP.21.L443},
  file = {/home/arch/Zotero/storage/CPI4EL7Z/1982Deep_Levels_Associated_with_Nitrogen_in.pdf;/home/arch/Zotero/storage/JRL9QBY5/1982Deep_Levels_Associated_with_Nitrogen_in.pdf;/home/arch/Zotero/storage/MJLNCCKY/meta.html;/home/arch/Zotero/storage/R2GAESHI/meta.html},
  journal = {Japanese Journal of Applied Physics},
  keywords = {DLTS,InDatabase,nitrogen,silicon},
  language = {en},
  number = {7A}
}

@article{vaqueiro-contreras2019,
  title = {Identification of the Mechanism Responsible for the Boron Oxygen Light Induced Degradation in Silicon Photovoltaic Cells},
  author = {{Vaqueiro-Contreras}, Michelle and Markevich, Vladimir P. and Coutinho, Jos{\'e} and Santos, Paulo and Crowe, Iain F. and Halsall, Matthew P. and Hawkins, Ian and Lastovskii, Stanislau B. and Murin, Leonid I. and Peaker, Anthony R.},
  year = {2019},
  volume = {125},
  pages = {185704},
  issn = {0021-8979, 1089-7550},
  doi = {10.1063/1.5091759},
  abstract = {Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of electricity generation. However, they suffer from significant degradation during the initial stages of use. This problem has been studied for 40 years resulting in over 250 research publications. Despite this, there is no consensus regarding the microscopic nature of the defect reactions responsible. In this paper, we present compelling evidence of the mechanism of degradation. We observe, using deep level transient spectroscopy and photoluminescence, under the action of light or injected carriers, the conversion of a deep boron-di-oxygen-related donor state into a shallow acceptor which correlates with the change in the lifetime of minority carriers in the silicon. Using ab initio modeling, we propose structures of the BsO2 defect which match the experimental findings. We put forward the hypothesis that the dominant recombination process associated with the degradation is trap-assisted Auger recombination. This assignment is supported by the observation of above bandgap luminescence due to hot carriers resulting from the Auger process.},
  file = {/home/arch/Zotero/storage/2LYSGS2F/2019Identification_of_the.pdf;/home/arch/Zotero/storage/G2D7BP6J/2019Identification_of_the.docx;/home/arch/Zotero/storage/KS6VA9I4/2019Identification_of_the.pdf},
  journal = {Journal of Applied Physics},
  keywords = {boron-oxygen,defects in semiconductors,DLTS,InDatabase,lifetime,silicon},
  language = {en},
  number = {18}
}

@article{walz1996,
  title = {On the Recombination Behaviour of Iron in Moderately Boron-Doped p-Type Silicon},
  author = {Walz, D. and My, J.-P. and Kamarinos, G.},
  year = {1996},
  volume = {62},
  pages = {345--353},
  issn = {0947-8396, 1432-0630},
  doi = {10.1007/BF01594232},
  abstract = {The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014\textendash{}1016 cm-3 supposing theEc -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.},
  file = {/home/arch/Zotero/storage/BULQRHUW/1996_On_the_recombination.pdf},
  journal = {Applied Physics A},
  language = {en},
  number = {4}
}

@article{wang1976,
  title = {Determination of Interface and Bulk-trap States of {{IGFET}}'s Using Deep-level Transient Spectroscopy},
  author = {Wang, K. L. and Evwaraye, A. O.},
  year = {1976},
  volume = {47},
  pages = {4574--4577},
  issn = {0021-8979},
  doi = {10.1063/1.322381},
  file = {/home/arch/Zotero/storage/SSVRBYSX/1976Determination_of_interface_and.pdf;/home/arch/Zotero/storage/UN224J7M/1976Determination_of_interface_and.pdf;/home/arch/Zotero/storage/86VFN7BC/1.html;/home/arch/Zotero/storage/US339UC8/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,silicon},
  number = {10}
}

@article{wang1984,
  title = {Complete Electrical Characterization of Recombination Properties of Titanium in Silicon},
  author = {Wang, Alex C. and Sah, C. T.},
  year = {1984},
  volume = {56},
  pages = {1021--1031},
  issn = {0021-8979},
  doi = {10.1063/1.334095},
  file = {/home/arch/Zotero/storage/4FJECPUR/1984Complete_electrical_characterization_of.pdf;/home/arch/Zotero/storage/TUGYRRWG/1.html},
  journal = {Journal of Applied Physics},
  keywords = {DLTS,DLTS-Cr,InDatabase,titanium},
  number = {4}
}

@article{wang1984a,
  title = {Electron Capture at the Two Acceptor Levels of a Zinc Center in Silicon},
  author = {Wang, Alex C. and Lu, Luke Su and Sah, C. T.},
  year = {1984},
  volume = {30},
  pages = {5896--5903},
  doi = {10.1103/PhysRevB.30.5896},
  abstract = {Electron-capture rates in zero electric field at both zinc acceptor levels have been directly and accurately measured by the transient-capacitance techniques for the first time. The data elucidate two major outstanding questions in recombination physics: (1) It has been suspected for two decades that the carrier capture rates associated with many centers with multiple charge states were due to a local Auger mechanism. We show that this postulate can be experimentally tested by the double-pulse method, and in the case of Zn in Si the Auger effect plays a negligible role. (2) While several workers have stressed that the electronic barrier may be more important than the vibronic barrier in determining the temperature dependence of carrier-capture rates at repulsive centers below room temperature, the charge effect was usually ignored in the literature. We show that in the case of Zn in Si, tunneling through the screened Coulomb barrier controls the temperature dependence below 200 K and above which tunneling through the vibronic barrier becomes important. Overall, the effect of the electronic barrier below room temperature is predominant and it gives a temperature-dependent capture rate that can be easily mistaken as the occurrence of a multiphonon-emission mechanism. Failure to recognize the charge effect may result in fitting of trap parameters inconsistent with physical reality.},
  file = {/home/arch/Zotero/storage/TSJHTJIZ/1984Electron_capture_at_the_two.pdf;/home/arch/Zotero/storage/YLSLZVTP/PhysRevB.30.html},
  journal = {Physical Review B},
  keywords = {Baber,DLTS,InDatabase,zinc},
  number = {10}
}

@article{weber1983,
  title = {Transition Metals in Silicon},
  author = {Weber, Eicke R.},
  year = {1983},
  volume = {30},
  pages = {1--22},
  issn = {0947-8396, 1432-0630},
  doi = {10.1007/BF00617708},
  abstract = {A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti \textemdash{} Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations.},
  file = {/home/arch/Zotero/storage/DH9QCSF2/1983_Transition_metals_in_silicon.pdf;/home/arch/Zotero/storage/LNNV9KXY/BF00617708.html},
  journal = {Applied Physics A},
  keywords = {EPR},
  language = {en},
  number = {1}
}

@article{wertheim1958,
  title = {Transient {{Recombination}} of {{Excess Carriers}} in {{Semiconductors}}},
  author = {Wertheim, G. K.},
  year = {1958},
  volume = {109},
  pages = {1086--1091},
  doi = {10.1103/PhysRev.109.1086},
  abstract = {The recombination equations for a system containing an arbitrary number of Shockley-Read recombination centers are formulated. Transient solutions are obtained for the decay following the injection of a pulse of carriers into a system containing one or two centers. The specific cases considered include (1) the simple one-center case, which enables us to discuss (a) the situation for a large injection of carriers, (b) recombination through donors in n-type or acceptors in p-type material, and (c) recombination through centers in the presence of direct recombination; (2) the case of a recombination center with a temporary trap, and (3) the case of two recombination centers.},
  file = {/home/arch/Zotero/storage/3MHJSWP6/1958Transient_Recombination_of_Excess.pdf;/home/arch/Zotero/storage/NJNLBBCZ/1958Transient_Recombination_of_Excess.pdf},
  journal = {Physical Review},
  keywords = {defects in semiconductors,InDatabase,indium,photoconductance,silicon,Transient,trapping},
  number = {4}
}

@article{wu1982,
  title = {Capture Cross Sections of the Gold Donor and Acceptor States in N-Type {{Czochralski}} Silicon},
  author = {Wu, R. H. and Peaker, A. R.},
  year = {1982},
  volume = {25},
  pages = {643--649},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(82)90066-1},
  abstract = {The hole and electron capture cross sections of the gold donor and acceptor have been measured directly in n-type silicon. The samples have been grown by the Czochralski technique and have originated from several different suppliers. They have been diffused with gold so that NT {$\lessequivlnt$} 0.1 (ND-NA). Measurements have been made on both Schottky diodes and diffused junctions and similar results obtained from all samples. The electron cross section of the acceptor level was found to be (0.85{$\pm$}0.2) \texttimes{} 10-16cm2 and the hole cross section of the donor (3.5{$\pm$}0.8) \texttimes{} 10-15cm2, both were essentially temperature independent. The hole cross section of the acceptor was (0.9{$\pm$}0.2) \texttimes{} 10-14cm2 at 300 K and showed a T-1.3 temperature dependence. The electron cross section of the donor was (0.9{$\pm$}0.2) \texttimes{} 10-15cm2 at 180 K with a T-2 dependence.},
  file = {/home/arch/Zotero/storage/NSLKMEY3/1982_Capture_cross_sections_of_the.pdf;/home/arch/Zotero/storage/SQM4G5KQ/0038110182900661.html},
  journal = {Solid-State Electronics},
  keywords = {DLTS,gold,silicon,ToGoInDatabase},
  number = {7}
}

@article{wunstel1981,
  title = {Iron-Related Deep Levels in Silicon},
  author = {W{\"u}nstel, K. and Wagner, P.},
  year = {1981},
  volume = {40},
  pages = {797--799},
  issn = {0038-1098},
  doi = {10.1016/0038-1098(81)90116-2},
  abstract = {Deep levels in iron-doped p-Si are investigated by means of capacitance transient spectroscopy. Five Fe-related defects are observed in suitably prepared samples. Rapid quenching produces interstitial Fei and FeB, which give rise to levels at Ev + 0.43 eVand 0.10 eV, respectively. Three further levels at Ev + 0.33 eV, Ev + 0.40 eV and Ev + 0.52 eV are caused by slower quenching rates. The concentration of Ev + 0.33 eV in slowly cooled Czochralski-grown Si strongly exceeds the concentration in similarly treated float-zone Si.},
  file = {/home/arch/Zotero/storage/8NTNT4F9/1981_Iron-related_deep_levels_in.pdf},
  journal = {Solid State Communications},
  keywords = {DLTS,iron,ToGoInDatabase},
  number = {8}
}

@article{wunstel1982,
  title = {Interstitial Iron and Iron-Acceptor Pairs in Silicon},
  author = {W{\"u}nstel, K. and Wagner, P.},
  year = {1982},
  volume = {27},
  pages = {207--212},
  issn = {1432-0630},
  doi = {10.1007/BF00619081},
  abstract = {Deep levels in iron-dopedp-type silicon are investigated by means of Deep Level Transient Spectroscopy (DLTS) and the Hall effect. Pairs of Fe with the acceptors B, Al, and Ga are observed at 0.1, 0.19, and 0.24 eV above the valence band edgeEv. For interstitial iron, (Fe i ), a level energy ofEv+0.39+-0.02 eV is obtained with DLTS after correction with a measured temperature dependence of the capture cross section. The Hall effect yieldsEv+0.37 eV for Fei. The annealing behavior of levels related to Fe is investigated up to 160 \textdegree{}C. Iron participates in at least four different types of impurity states: Fe i , Fe-acceptor pairs, precipitations (formed above 120 \textdegree{}C) and an additional electrically inactive state, which is formed at room temperature.},
  file = {/home/arch/Zotero/storage/APYV6F3A/1982_Interstitial_iron_and.pdf},
  journal = {Applied Physics A},
  keywords = {DLTS,iron,ToGoInDatabase},
  language = {en},
  number = {4}
}

@article{yarykin2019,
  title = {{{DLTS Investigation}} of the {{Energy Spectrum}} of {{Si}}:{{Mg Crystals}}},
  shorttitle = {{{DLTS Investigation}} of the {{Energy Spectrum}} of {{Si}}},
  author = {Yarykin, N. and Shuman, V. B. and Portsel, L. M. and Lodygin, A. N. and Astrov, Yu. A. and Abrosimov, N. V. and Weber, J.},
  year = {2019},
  volume = {53},
  pages = {789--794},
  issn = {1090-6479},
  doi = {10.1134/S1063782619060290},
  abstract = {Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100\textdegree{}C. It is found that two levels with a similar concentration of \textasciitilde{}6 \texttimes{} 1014 cm\textendash{}3 dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mgi) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole\textendash{}Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.},
  file = {/home/arch/Zotero/storage/3UL2UGZI/Yarykin et al. - 2019 - DLTS Investigation of the Energy Spectrum of SiMg.pdf},
  journal = {Semiconductors},
  keywords = {DLTS,InDatabase,magneseium,silicon},
  language = {en},
  number = {6}
}

@article{yau1971,
  title = {Thermal Ionization Rates and Energies of Electrons and Holes at Silver Centers in Silicon},
  author = {Yau, L. D. and Sah, C. T.},
  year = {1971},
  volume = {6},
  pages = {561--573},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210060225},
  abstract = {The thermal ionization rates of electrons and holes at the silver centers in silicon have been measured using the dark-capacitance transient technique. The ionization energies of the first donor and first acceptor state of silver are determined from the temperature dependences of the ionization rates. These are ED \textendash{} EV = 0.395 eV and EC \textendash{} EA = = 0.578 eV, respectively. The electric field dependences of the thermal ionization rates are also given.},
  copyright = {Copyright \textcopyright{} 1971 WILEY-VCH Verlag GmbH \& Co. KGaA},
  file = {/home/arch/Zotero/storage/WLDFQ72D/1971_Thermal_ionization_rates_and.pdf;/home/arch/Zotero/storage/3DYQSCJC/pssa.html},
  journal = {physica status solidi (a)},
  language = {en},
  number = {2}
}

@article{yau1972,
  title = {Thermal Emission Rates and Activation Energies of Electrons and Holes at Silver Centers in Silicon},
  author = {Yau, L. D. and Smiley, C. F. and Sah, C. T.},
  year = {1972},
  volume = {13},
  pages = {457--464},
  issn = {1521-396X},
  doi = {10.1002/pssa.2210130214},
  abstract = {The thermal emission rates of electrons and holes of silver-doped silicon are measured by the dark current and the dark and photo capacitance transient techniques. The wider range of the present data (nine orders of magnitude) provides a more accurate determination of the thermal activation energies and the Arrhenius constants. Data fitted to et = A exp ( \textendash{} {$\Delta$}E/kT) give: (i) donor center: {$\Delta$}E = ED \textendash{} Ev = (405 {$\pm$} 2) meV and A = (5.16 {$\pm$} 0.55) \texttimes{} 1013 s-1 and (ii) acceptor center: {$\Delta$}E = EC \textendash{} EA = (593 {$\pm$} 2) meV and A = (1.32 {$\pm$} 0.11) \texttimes{} 1013 s-1.},
  file = {/home/arch/Zotero/storage/ITYX2W5R/1972Thermal_emission_rates_and_activation.pdf;/home/arch/Zotero/storage/Q83Y5Q9G/pssa.html},
  journal = {physica status solidi (a)},
  keywords = {silver},
  language = {en},
  number = {2}
}

@article{yau1972a,
  title = {Measurement of Trapped-minority-carrier Thermal Emission Rates from {{Au}}, {{Ag}}, and {{Co}} Traps in Silicon},
  author = {Yau, L.d. and Sah, C.t.},
  year = {1972},
  volume = {21},
  pages = {157--158},
  issn = {0003-6951},
  doi = {10.1063/1.1654324},
  file = {/home/arch/Zotero/storage/W4Z4LTLJ/1972Measurement_of_trapped‐minority‐carrier.pdf;/home/arch/Zotero/storage/JNDY27L8/1.html},
  journal = {Applied Physics Letters},
  keywords = {cobolt,defects in semiconductors,DLTS,DLTS-Mo,gold,silicon,siliver,ToGoInDatabase},
  number = {4}
}

@article{yau1974,
  title = {Quenched-in Centers in Silicon P+n Junctions},
  author = {Yau, L. D. and Sah, C. T.},
  year = {1974},
  volume = {17},
  pages = {193--201},
  issn = {0038-1101},
  doi = {10.1016/0038-1101(74)90067-7},
  abstract = {Silicon p+n junctions heat treated at high temperatures (1200\textdegree{}C) for a long time (2\textendash{}20 hr) and then quenched to room temperatures or below shows two deep donor levels (EC-264meV andEC-542meV) in the n-type side of the junction depletion layer which appear to originate from the same imperfection center. The concentration of these levels ranges from 1013 to 1014 cm-3. The junction leakage current comes from carrier generation at the deeper level in the depletion region. Phosphorus gettering was found ineffective in reducing the concentration of these quenched-in levels, but they are annealed out by very slow cooling (25\textdegree{}C/hr to 650\textdegree{}C then quench to room temperatures). The thermal emission and capture rates of electrons and holes at these levels are measured as a function of temperature and electric field by the junction high frequency capacitance and d.c. leakage current transient techniques. It is demonstrated that the detailed balance relationship does not hold. The origin of this double donor center is yet to be identified.},
  file = {/home/arch/Zotero/storage/5SF6K24Y/1974_Quenched-in_centers_in.pdf;/home/arch/Zotero/storage/42SBPCJ7/0038110174900677.html},
  journal = {Solid-State Electronics},
  keywords = {ToGoInDatabase},
  number = {2}
}

@article{you1988,
  title = {Iron-vacancy-oxygen Complex in Silicon},
  author = {You, Zhi-pu and Gong, Min and Chen, Ji-yong and Corbett, J. W.},
  year = {1988},
  volume = {63},
  pages = {324--326},
  issn = {0021-8979},
  doi = {10.1063/1.340297},
  file = {/home/arch/Zotero/storage/5TNBU7UL/1988_Iron‐vacancy‐oxygen_complex.pdf;/home/arch/Zotero/storage/H6GMWBU9/1.html},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,DLTS,InDatabase,iron,silicon,vacancy},
  number = {2}
}

@article{zhou1991,
  title = {Physical {{Behaviour}} of 4d {{Transition Metal Impurity}} in {{Silicon}}},
  author = {Zhou, Jie and Ji, Xiu Jing and Li, Shu Ying and Jian, Wu and Gao, Ji Lin and Han, Zhi Young},
  year = {1991},
  volume = {38-41},
  pages = {457--462},
  issn = {1662-9752},
  doi = {10.4028/www.scientific.net/MSF.38-41.457},
  file = {/home/arch/Zotero/storage/3CLXW2R6/1991_Physical_Behaviour_of_4d.pdf},
  journal = {Materials Science Forum},
  language = {en}
}

@article{zoth1990,
  title = {A Fast, Preparation-Free Method to Detect Iron in Silicon},
  author = {Zoth, G. and Bergholz, W.},
  year = {1990},
  volume = {67},
  pages = {6764},
  doi = {10.1063/1.345063},
  abstract = {Iron is one of the most important impurities in silicon integrated-circuit technology. We present a fast (5 min), essentially preparation-free large-area (25 cm2 ) technique to determine the Fe concentration in boron-doped silicon with a sensitivity of 2\textendash{}5\texttimes{}1011 cm-3. The principle of the method is based on the fact that interstitially dissolved Fe undergoes a reversible pairing reaction with boron and that the minority-carrier diffusion length\textemdash{}as measured by the surface photovoltage method\textemdash{}is modified by this reaction. The method has been calibrated by deep-level transient spectroscopy and is also suitable to measure a surface Fe contamination in combination with a rapid thermal annealingdiffusion step},
  file = {/home/arch/Zotero/storage/NV2P9RFE/1990A_fast,_preparation-free_method_to.pdf},
  journal = {Journal of Applied Physics},
  keywords = {defects in semiconductors,InDatabase,iron,lifetime,LS},
  number = {11}
}